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Effects of boron and carbon on the surface tension of molten silicon under precisely controlled oxygen partial pressure

Author
MUKAI, K1 ; ZHANGFU YUAN1
[1] Department of Materials Science and Engineering, Faculty of Engineering, Kyushu Institute of Technology, Kitakyushu 804-8550, Japan
Source

Materials transactions - JIM. 2000, Vol 41, Num 2, pp 331-337 ; ref : 22 ref

ISSN
0916-1821
Scientific domain
Chemical industry parachemical industry; Metallurgy, welding; Polymers, paint and wood industries
Publisher
Japan Institute of Metals, Sendai
Publication country
Japan
Document type
Article
Language
English
Keyword (fr)
Addition bore Addition carbone Dépendance température Effet pression Etude expérimentale Métal liquide Méthode goutte sessile Pression partielle Relation composition propriété Silicium Tension superficielle
Keyword (en)
Boron additions Carbon additions Temperature dependence Pressure effects Experimental study Liquid metals Sessile drop method Partial pressure Property composition relationship Silicon Surface tension
Keyword (es)
Método gota sésil Relación composición propiedad
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H10 Fluid surfaces and fluid-fluid interfaces / 001B60H10C Surface energy (surface tension, interface tension, angle of contact, etc.)

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
1320009

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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