Surface kinetics of GaN evaporation and growth by molecular-beam epitaxy
- Author
- KARPOV, S. Yu1 ; TALALAEV, R. A1 ; MAKAROV, Yu. N2 ; GRANDJEAN, N3 ; MASSIES, J3 ; DAMILANO, B3
[1] Soft-Impact Ltd, P.O. Box 33, 194156 St Petersburg, Russian Federation
[2] Fluid Mechanics Department, University of Erlangen-Nürnberg, 4 Cauerstrasse, 91058 Erlangen, Germany
[3] Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, rue B. Grégory-Sophia Antipolis, 06560 Valbonne, France - Source
Surface science. 2000, Vol 450, Num 3, pp 191-203 ; ref : 27 ref
- Publisher
- Elsevier Science, Amsterdam
/
Elsevier Science, Lausanne
/
Elsevier Science, New York, NY
- Publication country
- Netherlands
- Document type
- Article
- Language
- Russian
- Keyword (fr)
- Adsorption Ammoniac Cinétique Epitaxie jet moléculaire Etude expérimentale Etude théorique Evaporation Gallium nitrure Matériau semiconducteur Ga N GaN Composé minéral
- Keyword (en)
- Adsorption Ammonia Kinetics Molecular beam epitaxy Experimental study Theoretical study Evaporation Gallium nitrides Semiconductor materials Inorganic compounds
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H45 Solid-fluid interfaces / 001B60H45D Adsorption and desorption kinetics; evaporation and condensation
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 1320315
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0039-6028(00)00055-8 
https://dx.doi.org/10.1016/S0039-6028(00)00055-8
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