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Structural and electrical properties of TiO2 RF sputtered thin films

Author
MARDARE, D1 ; RUSU, G. I1
[1] Faculty of Physics, 'Alexandru Ioan Cuza' University, 6600 Iasi, Romania
Source

Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 75, Num 1, pp 68-71 ; ref : 11 ref

ISSN
0921-5107
Scientific domain
Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Article
Language
English
Keyword (fr)
Composé binaire Conductivité électrique Couche mince Diffraction RX Dopage Dépendance température Energie activation Etude expérimentale Impureté Microscopie force atomique Microstructure Pulvérisation haute fréquence Relation structure propriété Titane oxyde O Ti TiO2 Composé minéral Métal transition composé
Keyword (en)
Binary compounds Electrical conductivity Thin films XRD Doping Temperature dependence Activation energy Experimental study Impurities Atomic force microscopy Microstructure Radiofrequency sputtering Property structure relationship Titanium oxides Inorganic compounds Transition element compounds
Keyword (es)
Doping Pulverización alta frecuencia Relación estructura propiedad
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C50 Electronic transport phenomena in thin films and low-dimensional structures / 001B70C50D Low-field transport and mobility; piezoresistance

Pacs
7350D Low-field transport and mobility; piezoresistance

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
1323573

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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