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Residual stresses in thermal barrier coatings : effects of interface asperity curvature/height and oxide thickness

Author
HSUEH, C.-H1 ; FULLER, E. R2
[1] Metals and Ceramics Division, Oak Ridge National Laboratory, PO Box 2008, Oak Ridge, TN 37831-6068, United States
[2] National Institute of Standards and Technology, Gaithersburg, MD 20899, United States
Source

Materials science & engineering. A, Structural materials : properties, microstructure and processing. 2000, Vol 283, Num 1-2, pp 46-55 ; ref : 23 ref

ISSN
0921-5093
Scientific domain
Crystallography; Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Article
Language
English
Keyword (fr)
Barrière thermique Contrainte résiduelle Etude théorique Interface solide solide Microstructure Méthode élément fini Revêtement Simulation numérique
Keyword (en)
Thermal barriers Residual stresses Theoretical study Solid-solid interfaces Microstructure Finite element method Coatings Digital simulation
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35G Mechanical and acoustical properties; adhesion

Pacs
6835G Mechanical and acoustical properties; adhesion

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
1329530

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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