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Strain effects and atomic structures in highly lattice-mismatched InAs0.6P0.4/InP modulation-doped single quantum wells

Author
KIM, T. W1 ; CHOO, D. C1
[1] Department of Physics, Kwangwoon University, 447-1 Wolgye-dong, Nowon-ku, Seoul 139-701, Korea, Republic of
Source

Materials research bulletin. 2001, Vol 36, Num 7-8, pp 1237-1243 ; ref : 15 ref

CODEN
MRBUAC
ISSN
0025-5408
Scientific domain
Inorganic chemistry; Crystallography; Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics
Publisher
Elsevier Science, Amsterdam / Elsevier Science, London
Publication country
United Kingdom
Document type
Article
Language
English
Keyword (fr)
Accommodation réseau Aire sélective Couche active Couche mince Couche tampon Diffraction électron Déformation Etude expérimentale Haute résolution Hétérojonction Indium Phosphoarséniure Indium phosphure Matériau modulé Microscopie électronique transmission Microstructure Puits quantique contraint Semiconducteur III-V Semiconducteur Spectre Raman Structure atomique As In P In P InAs0,6P0,4 InP Arséniure Composé minéral Phosphure
Keyword (en)
Mismatch lattice Selective area Active layer Thin films Buffer layer Electron diffraction Deformation Experimental study High-resolution methods Heterojunctions Indium Arsenides phosphides Indium phosphides Modulated materials Transmission electron microscopy Microstructure Strained quantum well III-V semiconductors Semiconductor materials Raman spectra Atomic structure Arsenides Inorganic compounds Phosphides
Keyword (es)
Acomodación red Capa activa Capa tampón Fosfoarseniuro Pozo cuántico forzado
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H65 Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
13387976

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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