The linkage between macroscopic gettering mechanisms and electronic configuration of 3d-elements in p/p+ epitaxial silicon wafers
- Author
- HÖLZL, R1 2 ; FABRY, L2 ; RANGE, K. J1
[1] Institute of Inorganic Chemistry, University of Regensburg, 83953 Regensburg, Germany
[2] Wacker Siltronic AG, P.O. Box 1140, 84479 Burghausen, Germany - Source
Applied physics. A, Materials science & processing (Print). 2002, Vol 74, Num 1, pp 35-39 ; ref : 47 ref
- ISSN
- 0947-8396
- Scientific domain
- Electronics; Optics; Condensed state physics
- Publisher
- Springer, Berlin
- Publication country
- Germany
- Document type
- Article
- Language
- English
- Keyword (fr)
- Addition métal transition Attaque chimique Centre donneur Contamination Etat impureté Etude expérimentale Impureté Silicium Solubilité Sorption getter Ségrégation impureté Traitement thermique Si
- Keyword (en)
- Transition element additions Chemical etching Donor center Contamination Impurity states Experimental study Impurities Silicon Solubility Gettering Impurity segregation Heat treatments
- Keyword (es)
- Ataque químico Centro dador Segregación impureza
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72Y Interaction between different crystal defects; gettering effect
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A55 Impurity and defect levels / 001B70A55C Elemental semiconductors
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 13417223
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/s003390100866 
https://dx.doi.org/10.1007/s003390100866
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