Steep retrograde indium channel profiling for high performance nMOSFETs device fabrication
- Author
- ONG, S. Y1 ; CHOR, E. F1 ; LEUNG, Y. K2 ; LEE, James2 ; LI, W. S2 ; SEE, Alex2 ; CHAN, Lap2
[1] Department of Electrical & Computer Engineering, National University of Singapore, Singapore, Singapore
[2] Technology Development Department, Chartered Semiconductor Manufacturing, Singapore, Singapore - Source
Microelectronics journal. 2002, Vol 33, Num 1-2, pp 55-60 ; ref : 11 ref
- ISSN
- 0959-8324
- Scientific domain
- Electronics
- Publisher
- Elsevier Science, Oxford
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Addition bore Addition indium Canal court Canal transistor Caractéristique électrique Evaluation performance Implantation Profil dopage Recuit thermique rapide Transistor MOSFET
- Keyword (en)
- Boron addition Indium addition Short channel Transistor channel Electrical characteristic Performance evaluation Implantation Doping profile Rapid thermal annealing MOSFET
- Keyword (es)
- Adición boro Adición indio Canal corto Canal transistor Característica eléctrica Evaluación prestación Implantación Perfil doping Recocido térmico rápido
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 13423836
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0026-2692(01)00104-5 
https://dx.doi.org/10.1016/S0026-2692(01)00104-5
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