On the nitrogen and oxygen incorporation in plasma-enhanced chemical vapor deposition (PRCVD) SiOxNy films
- Autor
- ALAYO, M. I1 ; PEREYRA, I1 ; SCOPEL, W. L2 ; FANTINI, M. C. A2
[1] Laboratory of Microelectronics, EPUSP, University of São Paulo, CP 61548, CEP 5424-970, Sao Paulo, SP, Brazil
[2] IFUSP, DFAP, CP 66318, CEP 5315-970, Sao Paulo, SP, Brazil - Fuente
Thin solid films. 2002, Vol 402, Num 1-2, pp 154-161 ; ref : 35 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Campo Científico
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Editor
- Elsevier Science, Lausanne
- País de la publicación
- Switzerland
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave (fr)
- Bande interdite Composition chimique Couche mince Cristallinité Croissance cristalline en phase vapeur Décharge haute fréquence Dépôt chimique phase vapeur Etude expérimentale Indice réfraction Mode liaison Mode opératoire Méthode PECVD Précurseur Rapport mélange Relation fabrication propriété Relation fabrication structure Silicium Oxynitrure N O Si SiOxNy Composé minéral Nitrure Oxyde Propriété optique
- Palabra clave (in)
- Energy gap Chemical composition Thin films Crystallinity Crystal growth from vapors High-frequency discharges CVD Experimental study Refractive index Binding mode Operating mode PECVD Precursor Mixing ratio Fabrication property relation Fabrication structure relation Silicon Oxynitrides Inorganic compounds Nitrides Oxides Optical properties
- Palabra clave (es)
- Cristalinidad Modo de enlace Método operatorio Relación fabricación propiedad Relación fabricación estructura
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H66 Optical properties of specific thin films / 001B70H66L Other semiconductors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Disciplina
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 13442761
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0040-6090(01)01685-6 
https://dx.doi.org/10.1016/S0040-6090(01)01685-6
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Acceso mediante arXiv
