Strain in the HWE-grown ZnTe/(100) GaAs hetero-interface
- Author
- KIM, B. J1 ; WANG, J. F1 ; ISHIKAWA, Y1 ; PARK, Y.-G1 ; SINDO, D1 ; ABE, S2 ; MASUMOTO, K2 ; ISSHIKI, M1
[1] Institute for Advanced Materials Processing, Tohoku University, 1-1, 2-Chome Katahira, Aobaku, Sendai 980-8577, Japan
[2] The Research Institute for Electric and Magnetic Materials, 2-1-1 Yagiyama-minami, Sendai 982-0807, Japan - Source
Journal of crystal growth. 2002, Vol 235, Num 1-4, pp 201-206 ; ref : 8 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Keyword (fr)
- Accommodation réseau Caractérisation Contrainte résiduelle Couche mince Cristallinité Croissance cristalline en phase vapeur Distribution contrainte Epitaxie Etude expérimentale Hétérojonction Interface solide solide Méthode paroi chaude Perfection cristalline Semiconducteur II-VI Zinc tellurure Substrat GaAs Te Zn ZnTe Composé minéral Métal transition composé
- Keyword (en)
- Mismatch lattice Characterization Residual stresses Thin films Crystallinity Crystal growth from vapors Stress distribution Epitaxy Experimental study Heterojunctions Solid-solid interfaces Hot wall growth Crystal perfection II-VI semiconductors Zinc tellurides Inorganic compounds Transition element compounds
- Keyword (es)
- Acomodación red Caracterización Cristalinidad Método pared caliente Perfección cristalina
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 13457813
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Access to the document
Install on your browser
DOI
10.1016/S0022-0248(01)02081-4 
https://dx.doi.org/10.1016/S0022-0248(01)02081-4
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0022-0248(01)02081-4\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:56:\"Strain in the HWE-grown ZnTe\/(100) GaAs hetero-interface\";s:9:\"\u0000*\u0000jtitle\";s:25:\"Journal of crystal growth\";s:9:\"\u0000*\u0000stitle\";s:16:\"J. cryst. growth\";s:7:\"\u0000*\u0000date\";s:4:\"2002\";s:9:\"\u0000*\u0000volume\";s:3:\"235\";s:8:\"\u0000*\u0000issue\";s:3:\"1-4\";s:8:\"\u0000*\u0000spage\";s:3:\"201\";s:8:\"\u0000*\u0000epage\";s:3:\"206\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-0248\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:3:\"KIM\";s:10:\"\u0000*\u0000aufirst\";s:4:\"B. J\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:10:\"WANG, J. F\";i:1;s:11:\"ISHIKAWA, Y\";i:2;s:10:\"PARK, Y.-G\";i:3;s:8:\"SINDO, D\";i:4;s:6:\"ABE, S\";i:5;s:11:\"MASUMOTO, K\";i:6;s:10:\"ISSHIKI, M\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JCRGAE\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:56:\"Strain in the HWE-grown ZnTe\/(100) GaAs hetero-interface\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0022-0248(01)02081-4\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:56:\"Strain in the HWE-grown ZnTe\/(100) GaAs hetero-interface\";s:9:\"\u0000*\u0000jtitle\";s:25:\"Journal of crystal growth\";s:9:\"\u0000*\u0000stitle\";s:16:\"J. cryst. growth\";s:7:\"\u0000*\u0000date\";s:4:\"2002\";s:9:\"\u0000*\u0000volume\";s:3:\"235\";s:8:\"\u0000*\u0000issue\";s:3:\"1-4\";s:8:\"\u0000*\u0000spage\";s:3:\"201\";s:8:\"\u0000*\u0000epage\";s:3:\"206\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-0248\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:3:\"KIM\";s:10:\"\u0000*\u0000aufirst\";s:4:\"B. J\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:10:\"WANG, J. F\";i:1;s:11:\"ISHIKAWA, Y\";i:2;s:10:\"PARK, Y.-G\";i:3;s:8:\"SINDO, D\";i:4;s:6:\"ABE, S\";i:5;s:11:\"MASUMOTO, K\";i:6;s:10:\"ISSHIKI, M\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JCRGAE\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:56:\"Strain in the HWE-grown ZnTe\/(100) GaAs hetero-interface\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0022-0248(01)02081-4\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0022-0248(01)02081-4\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:56:\"Strain in the HWE-grown ZnTe\/(100) GaAs hetero-interface\";s:9:\"\u0000*\u0000jtitle\";s:25:\"Journal of crystal growth\";s:9:\"\u0000*\u0000stitle\";s:16:\"J. cryst. growth\";s:7:\"\u0000*\u0000date\";s:4:\"2002\";s:9:\"\u0000*\u0000volume\";s:3:\"235\";s:8:\"\u0000*\u0000issue\";s:3:\"1-4\";s:8:\"\u0000*\u0000spage\";s:3:\"201\";s:8:\"\u0000*\u0000epage\";s:3:\"206\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-0248\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:3:\"KIM\";s:10:\"\u0000*\u0000aufirst\";s:4:\"B. J\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:10:\"WANG, J. F\";i:1;s:11:\"ISHIKAWA, Y\";i:2;s:10:\"PARK, Y.-G\";i:3;s:8:\"SINDO, D\";i:4;s:6:\"ABE, S\";i:5;s:11:\"MASUMOTO, K\";i:6;s:10:\"ISSHIKI, M\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JCRGAE\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:56:\"Strain in the HWE-grown ZnTe\/(100) GaAs hetero-interface\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0022-0248(01)02081-4\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:56:\"Strain in the HWE-grown ZnTe\/(100) GaAs hetero-interface\";s:9:\"\u0000*\u0000jtitle\";s:25:\"Journal of crystal growth\";s:9:\"\u0000*\u0000stitle\";s:16:\"J. cryst. growth\";s:7:\"\u0000*\u0000date\";s:4:\"2002\";s:9:\"\u0000*\u0000volume\";s:3:\"235\";s:8:\"\u0000*\u0000issue\";s:3:\"1-4\";s:8:\"\u0000*\u0000spage\";s:3:\"201\";s:8:\"\u0000*\u0000epage\";s:3:\"206\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-0248\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:3:\"KIM\";s:10:\"\u0000*\u0000aufirst\";s:4:\"B. J\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:10:\"WANG, J. F\";i:1;s:11:\"ISHIKAWA, Y\";i:2;s:10:\"PARK, Y.-G\";i:3;s:8:\"SINDO, D\";i:4;s:6:\"ABE, S\";i:5;s:11:\"MASUMOTO, K\";i:6;s:10:\"ISSHIKI, M\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JCRGAE\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:56:\"Strain in the HWE-grown ZnTe\/(100) GaAs hetero-interface\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0022-0248(01)02081-4\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:56:\"Strain in the HWE-grown ZnTe\/(100) GaAs hetero-interface\";s:9:\"\u0000*\u0000jtitle\";s:25:\"Journal of crystal growth\";s:9:\"\u0000*\u0000stitle\";s:16:\"J. cryst. growth\";s:7:\"\u0000*\u0000date\";s:4:\"2002\";s:9:\"\u0000*\u0000volume\";s:3:\"235\";s:8:\"\u0000*\u0000issue\";s:3:\"1-4\";s:8:\"\u0000*\u0000spage\";s:3:\"201\";s:8:\"\u0000*\u0000epage\";s:3:\"206\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-0248\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:3:\"KIM\";s:10:\"\u0000*\u0000aufirst\";s:4:\"B. J\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:10:\"WANG, J. F\";i:1;s:11:\"ISHIKAWA, Y\";i:2;s:10:\"PARK, Y.-G\";i:3;s:8:\"SINDO, D\";i:4;s:6:\"ABE, S\";i:5;s:11:\"MASUMOTO, K\";i:6;s:10:\"ISSHIKI, M\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JCRGAE\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:56:\"Strain in the HWE-grown ZnTe\/(100) GaAs hetero-interface\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
