Influence of oxide film on diffusion joining of FZ silicon single crystals
- Author
- MEGURO, Susumu1 ; OHASHI, Osamu1
[1] National Research Institute for Metals, (National Institute for Materials Science), Tsukuba 305-0047, Japan - Source
Nippon Kinzoku Gakkaishi (1952). = Journal of the Japan Institute of Metals (1952). 2001, Vol 65, Num 12, pp 1066-1072 ; ref : 13 ref
- CODEN
- NIKGAV
- ISSN
- 0021-4876
- Scientific domain
- Metallurgy, welding
- Publisher
- Nippon Kinzoku Gakkai, Sendai
- Publication country
- Japan
- Document type
- Article
- Language
- Japanese
- Keyword (fr)
- Assemblage Couche oxyde Diffraction électron Effet température Microscopie électronique balayage Microscopie électronique transmission Monocristal Résistance flexion Silicium Soudage diffusion Soudage Surface rupture
- Keyword (en)
- Joining Oxide layer Electron diffraction Temperature effects Scanning electron microscopy Transmission electron microscopy Monocrystals Flexural strength Silicon Diffusion welding Welding Fracture surfaces
- Keyword (es)
- Capa óxido
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A20 Materials synthesis; materials processing
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 13467037
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.2320/jinstmet1952.65.12_1066 
https://dx.doi.org/10.2320/jinstmet1952.65.12_1066
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