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Growth of InAs quantum dots on focussed ion beam implanted GaAs(100)

Author
REUTER, D1 ; SCHAFMEISTER, P1 ; KOCH, J1 ; SCHMIDT, K2 ; WIECK, A. D1
[1] Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, Universitätsstrasse 150, 44780 Bochum, Germany
[2] Lehrstuhl für Werkstoffe der Elektrotechnik, Ruhr-Universität Bochum, Universitätsstrasse 150, 44780 Bochum, Germany
Conference title
Containing papers presented at the European Materials Research Society (E-MRS) 2001, Spring Meeting, Symposium I: Self-Organization in Semiconductors-Fundamentals and Applications, Strasbourg, France, June 4-8th 2001
Conference name
E-MRS 2001 Spring Meeting (1 ; Strasbourg 2001-06-04)
Author (monograph)
DÖHLER, Gottfried H (Editor)1
European Materials Research Society, Europe (Funder/Sponsor)
[1] Institut für Technische Physik I, Friedrich-Alexander-Universität, Erlangen-Nürnberg, Erwin-Rommel-Strasse 1, 91058 Erlangen, Germany
Source

Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 230-233 ; ref : 9 ref

ISSN
0921-5107
Scientific domain
Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Keyword (fr)
Composé binaire Couche autoassemblée Epitaxie jet moléculaire Faisceau ion Gallium arséniure Implantation ion Indium arséniure Matériau dopé Microscopie électronique balayage Photoluminescence Point quantique Recuit Résistivité couche Semiconducteur Silicium As Ga As In GaAs InAs Composé minéral
Keyword (en)
Binary compounds Self-assembled layers Molecular beam epitaxy Ion beams Gallium arsenides Ion implantation Indium arsenides Doped materials Scanning electron microscopy Photoluminescence Quantum dots Annealing Sheet resistivity Semiconductor materials Silicon Inorganic compounds
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55L Defects and impurities: doping, implantation, distribution, concentration, etc

Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H67 Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures / 001B70H67H Quantum dots

Pacs
6855L Defects and impurities: doping, implantation, distribution, concentration, etc

Pacs
7867H Quantum dots

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
13479304

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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