Low-dimensional inverted Si/SiGe modulation-doped electron gases using selective ex-situ ion implantation
- Author
- PAUL, D. J1 ; AHMED, A1 ; CHURCHILL, A. C2 ; ROBBINS, D. J2 ; LEONG, W. Y2
[1] Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB3 0HE, United Kingdom
[2] Defence Evaluation and Research Agency (DERA), Electronics Section, St. Andrews Road, Great Malvern WR14 3PS, United Kingdom - Conference title
- European Materials Research Society (E-MRS) 2001, Spring Meeting, Symposium D: Second International Conference on Silicon Epitaxy and Heterostructures, Strasbourg, France, June 4-8th 2001
- Conference name
- European Materials Research Society (E-MRS), Spring Meeting, Symposium D (E-MRS), Spring Meeting, Symposium D (Strasbourg 2001-06-04) = International Conference on Silicon Epitaxy and Heterostructures (2 ; Strasbourg 2001-06-04)
- Author (monograph)
- KASPER, E (Editor); EISELE, I (Editor); PARKER, E. H. C (Editor)
European Materials Research Society, Strasbourg, France (Funder/Sponsor) - Source
Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 111-115 ; ref : 17 ref
- ISSN
- 0921-5107
- Scientific domain
- Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Alliage Ge Si Alliage binaire Alliage semiconducteur Caractéristique électrique Densité porteur charge Dopage modulé Dépôt chimique phase vapeur Gaz électron Implantation ion Mobilité porteur charge Puits quantique contraint Silicium Transistor effet champ Ge Si Si SiGe Fabrication microélectronique
- Keyword (en)
- Ge-Si alloys Binary alloy Semiconductor alloys Electrical characteristic Charge carrier density Modulation doping Chemical vapor deposition Electron gas Ion implantation Charge carrier mobility Strained quantum well Silicon Field effect transistor Microelectronic fabrication
- Keyword (es)
- Aleación binaria Característica eléctrica Concentración portador carga Doping modulado Depósito químico fase vapor Gas electrón Implantación ión Movilidad portador carga Pozo cuántico forzado Silicio Transistor efecto campo Fabricación microeléctrica
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 13482900
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0921-5107(01)00812-1 
https://dx.doi.org/10.1016/S0921-5107(01)00812-1
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