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Crystalline to amorphous phase transition in very low temperature molecular beam epitaxy

Author
BAUER, M1 ; OEHME, M1 ; KASPER, E1
[1] Institut für Halbleitertechnik, Universität Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany
Conference title
European Materials Research Society (E-MRS) 2001, Spring Meeting, Symposium D: Second International Conference on Silicon Epitaxy and Heterostructures, Strasbourg, France, June 4-8th 2001
Conference name
European Materials Research Society (E-MRS), Spring Meeting, Symposium D (E-MRS), Spring Meeting, Symposium D (Strasbourg 2001-06-04) = International Conference on Silicon Epitaxy and Heterostructures (2 ; Strasbourg 2001-06-04)
Author (monograph)
KASPER, E (Editor); EISELE, I (Editor); PARKER, E. H. C (Editor)
European Materials Research Society, Strasbourg, France (Funder/Sponsor)
Source

Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 263-268 ; ref : 27 ref

ISSN
0921-5107
Scientific domain
Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Keyword (fr)
Amorphisation Contrôle Couche mince Couche épitaxique Croissance cristalline Epitaxie jet moléculaire Etat amorphe Etude expérimentale In situ Phase alpha Réflectivité Résolution temporelle Semiconducteur Silicium Transformation phase Très basse température a-Si Non métal
Keyword (en)
Amorphization Monitoring Thin films Epitaxial layers Crystal growth Molecular beam epitaxy Amorphous state Experimental study In situ Alpha phase Reflectivity Time resolution Semiconductor materials Silicon Phase transformations Very low temperature Nonmetals
Keyword (es)
In situ Fase alfa Reflectividad Temperatura muy baja
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy

Pacs
6855J Structure and morphology; thickness

Pacs
8115H Molecular, atomic, ion, and chemical beam epitaxy

Discipline
Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
13482932

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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