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Low temperature epitaxial silicon films deposited by ion-assisted deposition

Author
WAGNER, T. A1 ; OBERBECK, L1 ; BERGMANN, R. B1
[1] Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany
Conference title
European Materials Research Society (E-MRS) 2001, Spring Meeting, Symposium D: Second International Conference on Silicon Epitaxy and Heterostructures, Strasbourg, France, June 4-8th 2001
Conference name
European Materials Research Society (E-MRS), Spring Meeting, Symposium D (E-MRS), Spring Meeting, Symposium D (Strasbourg 2001-06-04) = International Conference on Silicon Epitaxy and Heterostructures (2 ; Strasbourg 2001-06-04)
Author (monograph)
KASPER, E (Editor); EISELE, I (Editor); PARKER, E. H. C (Editor)
European Materials Research Society, Strasbourg, France (Funder/Sponsor)
Source

Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 319-322 ; ref : 19 ref

ISSN
0921-5107
Scientific domain
Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Keyword (fr)
Basse température Couche épitaxique Croissance cristalline en phase vapeur Densité défaut cristallin Epitaxie jet moléculaire Etude expérimentale Film Longueur diffusion(transport) Méthode IBAD Porteur minoritaire Potentiel ionisation Semiconducteur Silicium Si Non métal
Keyword (en)
Low temperature Epitaxial layers Crystal growth from vapors Crystal defect density Molecular beam epitaxy Experimental study Films Diffusion length Ion beam assisted deposition method Minority carriers Ionization potential Semiconductor materials Silicon Nonmetals
Keyword (es)
Baja temperatura Densidad defecto cristalino
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15J Ion and electron beam-assisted deposition; ion plating

Pacs
8115H Molecular, atomic, ion, and chemical beam epitaxy

Pacs
8115J Ion and electron beam-assisted deposition; ion plating

Discipline
Physics and materials science
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
13482943

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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