Epitaxial ErSi2-x on strained and relaxed Si1-xGex
- Author
- TRAVLOS, A1 ; APOSTOLOPOULOS, G1 ; BOUKOS, N1 ; KATINIOTIS, Ch2 ; TSAMAKIS, D2
[1] Institute of Materials Science, National Centre for Scientific Research Demokritos, PO Box 60228, 153 10 Aghia Paraskevi Attikis, Athens, Greece
[2] National Technical University of Athens, Iroon Polytechniou 9, 157 73 Zografou, Athens, Greece - Conference title
- European Materials Research Society (E-MRS) 2001, Spring Meeting, Symposium D: Second International Conference on Silicon Epitaxy and Heterostructures, Strasbourg, France, June 4-8th 2001
- Conference name
- European Materials Research Society (E-MRS), Spring Meeting, Symposium D (E-MRS), Spring Meeting, Symposium D (Strasbourg 2001-06-04) = International Conference on Silicon Epitaxy and Heterostructures (2 ; Strasbourg 2001-06-04)
- Author (monograph)
- KASPER, E (Editor); EISELE, I (Editor); PARKER, E. H. C (Editor)
European Materials Research Society, Strasbourg, France (Funder/Sponsor) - Source
Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 382-385 ; ref : 4 ref
- ISSN
- 0921-5107
- Scientific domain
- Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Accommodation réseau Alliage binaire Contrainte Couche épitaxique Croissance cristalline Diffraction RX Erbium siliciure Etude expérimentale Germanium alliage Haute résolution Hétérojonction Microscopie électronique transmission Recuit thermique Semiconducteur Silicium alliage Siliciure Solution solide Substrat Er Si ErSi2-x Substrat Si1-xGex Composé minéral Lanthanide composé Non métal
- Keyword (en)
- Mismatch lattice Binary alloys Stresses Epitaxial layers Crystal growth XRD Erbium silicides Experimental study Germanium alloys High-resolution methods Heterojunctions Transmission electron microscopy Thermal annealing Semiconductor materials Silicon alloys Silicides Solid solutions Substrates Inorganic compounds Rare earth compounds Nonmetals
- Keyword (es)
- Acomodación red Recocido térmico
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 13482957
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Access to the document
Install on your browser
DOI
10.1016/S0921-5107(01)00835-2 
https://dx.doi.org/10.1016/S0921-5107(01)00835-2
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0921-5107(01)00835-2\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:50:\"Epitaxial ErSi2-x on strained and relaxed Si1-xGex\";s:9:\"\u0000*\u0000jtitle\";s:81:\"Materials science & engineering. B, Solid-state materials for advanced technology\";s:9:\"\u0000*\u0000stitle\";s:52:\"Mater. sci. eng., B, Solid-state mater. adv. technol\";s:7:\"\u0000*\u0000date\";s:4:\"2002\";s:9:\"\u0000*\u0000volume\";s:2:\"89\";s:8:\"\u0000*\u0000issue\";s:3:\"1-3\";s:8:\"\u0000*\u0000spage\";s:3:\"382\";s:8:\"\u0000*\u0000epage\";s:3:\"385\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0921-5107\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"TRAVLOS\";s:10:\"\u0000*\u0000aufirst\";s:1:\"A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:17:\"APOSTOLOPOULOS, G\";i:1;s:9:\"BOUKOS, N\";i:2;s:14:\"KATINIOTIS, Ch\";i:3;s:11:\"TSAMAKIS, D\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:187:\"European Materials Research Society (E-MRS) 2001, Spring Meeting, Symposium D: Second International Conference on Silicon Epitaxy and Heterostructures, Strasbourg, France, June 4-8th 2001\";s:8:\"\u0000*\u0000title\";s:50:\"Epitaxial ErSi2-x on strained and relaxed Si1-xGex\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0921-5107(01)00835-2\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:50:\"Epitaxial ErSi2-x on strained and relaxed Si1-xGex\";s:9:\"\u0000*\u0000jtitle\";s:81:\"Materials science & engineering. B, Solid-state materials for advanced technology\";s:9:\"\u0000*\u0000stitle\";s:52:\"Mater. sci. eng., B, Solid-state mater. adv. technol\";s:7:\"\u0000*\u0000date\";s:4:\"2002\";s:9:\"\u0000*\u0000volume\";s:2:\"89\";s:8:\"\u0000*\u0000issue\";s:3:\"1-3\";s:8:\"\u0000*\u0000spage\";s:3:\"382\";s:8:\"\u0000*\u0000epage\";s:3:\"385\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0921-5107\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"TRAVLOS\";s:10:\"\u0000*\u0000aufirst\";s:1:\"A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:17:\"APOSTOLOPOULOS, G\";i:1;s:9:\"BOUKOS, N\";i:2;s:14:\"KATINIOTIS, Ch\";i:3;s:11:\"TSAMAKIS, D\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:187:\"European Materials Research Society (E-MRS) 2001, Spring Meeting, Symposium D: Second International Conference on Silicon Epitaxy and Heterostructures, Strasbourg, France, June 4-8th 2001\";s:8:\"\u0000*\u0000title\";s:50:\"Epitaxial ErSi2-x on strained and relaxed Si1-xGex\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0921-5107(01)00835-2\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0921-5107(01)00835-2\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:50:\"Epitaxial ErSi2-x on strained and relaxed Si1-xGex\";s:9:\"\u0000*\u0000jtitle\";s:81:\"Materials science & engineering. B, Solid-state materials for advanced technology\";s:9:\"\u0000*\u0000stitle\";s:52:\"Mater. sci. eng., B, Solid-state mater. adv. technol\";s:7:\"\u0000*\u0000date\";s:4:\"2002\";s:9:\"\u0000*\u0000volume\";s:2:\"89\";s:8:\"\u0000*\u0000issue\";s:3:\"1-3\";s:8:\"\u0000*\u0000spage\";s:3:\"382\";s:8:\"\u0000*\u0000epage\";s:3:\"385\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0921-5107\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"TRAVLOS\";s:10:\"\u0000*\u0000aufirst\";s:1:\"A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:17:\"APOSTOLOPOULOS, G\";i:1;s:9:\"BOUKOS, N\";i:2;s:14:\"KATINIOTIS, Ch\";i:3;s:11:\"TSAMAKIS, D\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:187:\"European Materials Research Society (E-MRS) 2001, Spring Meeting, Symposium D: Second International Conference on Silicon Epitaxy and Heterostructures, Strasbourg, France, June 4-8th 2001\";s:8:\"\u0000*\u0000title\";s:50:\"Epitaxial ErSi2-x on strained and relaxed Si1-xGex\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0921-5107(01)00835-2\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:50:\"Epitaxial ErSi2-x on strained and relaxed Si1-xGex\";s:9:\"\u0000*\u0000jtitle\";s:81:\"Materials science & engineering. B, Solid-state materials for advanced technology\";s:9:\"\u0000*\u0000stitle\";s:52:\"Mater. sci. eng., B, Solid-state mater. adv. technol\";s:7:\"\u0000*\u0000date\";s:4:\"2002\";s:9:\"\u0000*\u0000volume\";s:2:\"89\";s:8:\"\u0000*\u0000issue\";s:3:\"1-3\";s:8:\"\u0000*\u0000spage\";s:3:\"382\";s:8:\"\u0000*\u0000epage\";s:3:\"385\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0921-5107\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"TRAVLOS\";s:10:\"\u0000*\u0000aufirst\";s:1:\"A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:17:\"APOSTOLOPOULOS, G\";i:1;s:9:\"BOUKOS, N\";i:2;s:14:\"KATINIOTIS, Ch\";i:3;s:11:\"TSAMAKIS, D\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:187:\"European Materials Research Society (E-MRS) 2001, Spring Meeting, Symposium D: Second International Conference on Silicon Epitaxy and Heterostructures, Strasbourg, France, June 4-8th 2001\";s:8:\"\u0000*\u0000title\";s:50:\"Epitaxial ErSi2-x on strained and relaxed Si1-xGex\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0921-5107(01)00835-2\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:50:\"Epitaxial ErSi2-x on strained and relaxed Si1-xGex\";s:9:\"\u0000*\u0000jtitle\";s:81:\"Materials science & engineering. B, Solid-state materials for advanced technology\";s:9:\"\u0000*\u0000stitle\";s:52:\"Mater. sci. eng., B, Solid-state mater. adv. technol\";s:7:\"\u0000*\u0000date\";s:4:\"2002\";s:9:\"\u0000*\u0000volume\";s:2:\"89\";s:8:\"\u0000*\u0000issue\";s:3:\"1-3\";s:8:\"\u0000*\u0000spage\";s:3:\"382\";s:8:\"\u0000*\u0000epage\";s:3:\"385\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0921-5107\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"TRAVLOS\";s:10:\"\u0000*\u0000aufirst\";s:1:\"A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:17:\"APOSTOLOPOULOS, G\";i:1;s:9:\"BOUKOS, N\";i:2;s:14:\"KATINIOTIS, Ch\";i:3;s:11:\"TSAMAKIS, D\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:187:\"European Materials Research Society (E-MRS) 2001, Spring Meeting, Symposium D: Second International Conference on Silicon Epitaxy and Heterostructures, Strasbourg, France, June 4-8th 2001\";s:8:\"\u0000*\u0000title\";s:50:\"Epitaxial ErSi2-x on strained and relaxed Si1-xGex\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
