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Epitaxial ErSi2-x on strained and relaxed Si1-xGex

Author
TRAVLOS, A1 ; APOSTOLOPOULOS, G1 ; BOUKOS, N1 ; KATINIOTIS, Ch2 ; TSAMAKIS, D2
[1] Institute of Materials Science, National Centre for Scientific Research Demokritos, PO Box 60228, 153 10 Aghia Paraskevi Attikis, Athens, Greece
[2] National Technical University of Athens, Iroon Polytechniou 9, 157 73 Zografou, Athens, Greece
Conference title
European Materials Research Society (E-MRS) 2001, Spring Meeting, Symposium D: Second International Conference on Silicon Epitaxy and Heterostructures, Strasbourg, France, June 4-8th 2001
Conference name
European Materials Research Society (E-MRS), Spring Meeting, Symposium D (E-MRS), Spring Meeting, Symposium D (Strasbourg 2001-06-04) = International Conference on Silicon Epitaxy and Heterostructures (2 ; Strasbourg 2001-06-04)
Author (monograph)
KASPER, E (Editor); EISELE, I (Editor); PARKER, E. H. C (Editor)
European Materials Research Society, Strasbourg, France (Funder/Sponsor)
Source

Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 382-385 ; ref : 4 ref

ISSN
0921-5107
Scientific domain
Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Keyword (fr)
Accommodation réseau Alliage binaire Contrainte Couche épitaxique Croissance cristalline Diffraction RX Erbium siliciure Etude expérimentale Germanium alliage Haute résolution Hétérojonction Microscopie électronique transmission Recuit thermique Semiconducteur Silicium alliage Siliciure Solution solide Substrat Er Si ErSi2-x Substrat Si1-xGex Composé minéral Lanthanide composé Non métal
Keyword (en)
Mismatch lattice Binary alloys Stresses Epitaxial layers Crystal growth XRD Erbium silicides Experimental study Germanium alloys High-resolution methods Heterojunctions Transmission electron microscopy Thermal annealing Semiconductor materials Silicon alloys Silicides Solid solutions Substrates Inorganic compounds Rare earth compounds Nonmetals
Keyword (es)
Acomodación red Recocido térmico
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness

Pacs
6855J Structure and morphology; thickness

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
13482957

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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