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Growth mechanisms in thin film epitaxy of Si/SiGe from hydrides

Author
ZHANG, J1 ; WOODS, N. J1 ; BRETON, G1 ; PRICE, R. W1 ; HARTELL, A. D1 ; LAU, G. S2 ; LIU, R3 ; WEE, A. T. S3 ; TOK, E. S2
[1] Blackett Laboratory, Department of Physics and Centre for Electronic Materials and Devices, Imperial College of Science Technology and Medicine, Prince Consort Road, London SW 7 2BW, United Kingdom
[2] Department of Materials Science, National University of Singapore, Kent Ridge, Singapore 119260, Singapore
[3] Department of Physics, National University of Singapore, Kent Ridge, Singapore 119260, Singapore
Conference title
European Materials Research Society (E-MRS) 2001, Spring Meeting, Symposium D: Second International Conference on Silicon Epitaxy and Heterostructures, Strasbourg, France, June 4-8th 2001
Conference name
European Materials Research Society (E-MRS), Spring Meeting, Symposium D (E-MRS), Spring Meeting, Symposium D (Strasbourg 2001-06-04) = International Conference on Silicon Epitaxy and Heterostructures (2 ; Strasbourg 2001-06-04)
Author (monograph)
KASPER, E (Editor); EISELE, I (Editor); PARKER, E. H. C (Editor)
European Materials Research Society, Strasbourg, France (Funder/Sponsor)
Source

Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 399-405 ; ref : 24 ref

ISSN
0921-5107
Scientific domain
Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Keyword (fr)
Alliage binaire Couche mince Couche épitaxique Croissance cristalline en phase vapeur Dépôt chimique phase vapeur Epitaxie Etude expérimentale Germanium alliage Hétérojonction Mécanisme croissance Méthode GSMBE Précurseur Semiconducteur Silicium alliage Silicium Ge Si Si SiGe Hydrure Non métal
Keyword (en)
Binary alloys Thin films Epitaxial layers Crystal growth from vapors CVD Epitaxy Experimental study Germanium alloys Heterojunctions Growth mechanism GSMBE method Precursor Semiconductor materials Silicon alloys Silicon Hydrides Nonmetals
Keyword (es)
Mecanismo crecimiento Método GSMBE
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy

Pacs
8115G Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.)

Pacs
8115H Molecular, atomic, ion, and chemical beam epitaxy

Discipline
Physics and materials science
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
13482961

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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