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Device structure and electrical characteristics of strained-Si-on-insulator (strained-SOI) MOSFETs

Author
TAKAGI, S1 ; SUGIYAMA, N1 ; MIZUNO, T1 ; TEZUKA, T1 ; KUROBE, A1
[1] Advanced LSI Technology Laboratory, Corporate Research and Development Center, Toshiba Corporation, I Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210-8582, Japan
Conference title
European Materials Research Society (E-MRS) 2001, Spring Meeting, Symposium D: Second International Conference on Silicon Epitaxy and Heterostructures, Strasbourg, France, June 4-8th 2001
Conference name
European Materials Research Society (E-MRS), Spring Meeting, Symposium D (E-MRS), Spring Meeting, Symposium D (Strasbourg 2001-06-04) = International Conference on Silicon Epitaxy and Heterostructures (2 ; Strasbourg 2001-06-04)
Author (monograph)
KASPER, E (Editor); EISELE, I (Editor); PARKER, E. H. C (Editor)
European Materials Research Society, Strasbourg, France (Funder/Sponsor)
Source

Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 426-434 ; ref : 31 ref

ISSN
0921-5107
Scientific domain
Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Keyword (fr)
Alliage Ge Si Alliage binaire Alliage semiconducteur Canal n Canal p Canal transistor Caractéristique électrique Couche contrainte Silicium Technologie SIMOX Technologie silicium sur isolant Transistor MOSFET Ge Si Si SiGe
Keyword (en)
Ge-Si alloys Binary alloy Semiconductor alloys n channel p channel Transistor channel Electrical characteristic Strained layer Silicon SIMOX technology Silicon on insulator technology MOSFET
Keyword (es)
Aleación binaria Canal n Canal p Canal transistor Característica eléctrica Capa forzada Silicio Tecnología SIMOX Tecnología silicio sobre aislante
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
13482966

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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