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Effective doping in cubic Si3N4 and Ge3N4: A first-principles study : Structure and properties of advanced nitrides and electronic nitrides

Author
OBA, Fumiyasu1 ; TATSUMI, Kazuyoshi2 ; TANAKA, Isao2 ; ADACHI, Hirohiko2
[1] Engineering Research Institute, The University of Tokyo, Tokyo 113-8656, Japan
[2] Department of Materials Science and Engineering, Kyoto University, Kyoto 606-8501, Japan
Conference name
Structure and Properties of Advanced Nitrides and Electronic Nitrides. Symposium A4 (Indianapolis, IN 2001-04-22)
Source

Journal of the American Ceramic Society. 2002, Vol 85, Num 1, pp 97-100 ; ref : 21 ref

CODEN
JACTAW
ISSN
0002-7820
Scientific domain
Chemical industry parachemical industry
Publisher
Blackwell, Malden,MA
Publication country
United States
Document type
Conference Paper
Language
English
Keyword (fr)
Addition aluminium Addition antimoine Addition oxygène Addition phosphore Compensation charge Dopage cristal Energie totale Etude théorique Formation défaut Germanium nitrure Méthode pseudopotentiel Onde plane Potentiel ionisation Réseau cubique Semiconducteur type n Semiconducteur type p Silicium nitrure Ge N Ge3N4 N Si Si3N4 Composé minéral
Keyword (en)
Aluminium additions Antimony additions Oxygen additions Phosphorus additions Charge compensation Crystal doping Total energy Theoretical study Defect formation Germanium nitrides Pseudopotential methods Plane waves Ionization potential Cubic lattices n-type conductors p-type conductors Silicon nitrides Inorganic compounds
Keyword (es)
Formación defecto
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72B Theories and models of crystal defects

Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72W Doping and impurity implantation in other materials

Pacs
6172B Theories and models of crystal defects

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
13488877

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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