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Dynamic latch-up in advanced LIGBT structures at high operating temperatures

Author
VELLVEHI, M1 ; JORDA, X1 ; FLORES, D1 ; MORVAN, E1 ; GODIGNON, P1 ; REBOLLO, J1 ; MILLAN, J1
[1] Centro Nacional de Microelectrónica (CNM-CSIC), Campus UAB, Bellaterra, 08193 Barcelona, Spain
Conference title
Third international conference on low dimensional structures and devices, September 15-17, 1999, Antalya, Turkey
Conference name
LDSD'99. International Conference (3 ; Antalya 1999-09-15)
Author (monograph)
HENINI, Mohamed (Editor)1
[1] School of Physics and Astronomy, University of Nottingham, University Park, Nottingham NG7 2RD, United Kingdom
Source

Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 304-308 ; ref : 10 ref

ISSN
0921-5107
Scientific domain
Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Keyword (fr)
Caractéristique dynamique Circuit intégré Circuit puissance Commutation circuit Effet température Fabrication Facteur mérite Haute température Transistor bipolaire grille isolée Transistor latéral
Keyword (en)
Dynamic characteristic Integrated circuit Power circuit Circuit switching Temperature effect Manufacturing Figure of merit High temperature Insulated gate bipolar transistor Lateral transistor
Keyword (es)
Característica dinámica Circuito integrado Circuito potencia Conmutación circuito Efecto temperatura Fabricación Alta temperatura Transistor bipolar rejilla aislada Transistor lateral
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
1348915

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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