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Optimization of pretreatment of GaP substrates for molecular beam epitaxy of ZnS-based materials

Author
ICHINO, K1 ; NISHIKAWA, T1 ; KAWAKAMI, F1 ; KOSUGI, T1 ; KITAGAWA, M1 ; KOBAYASHI, H1
[1] Department of Electrical and Electronic Engineering, Tottori University, 4-101 Koyama-minami, Tottori 680-8552, Japan
Conference title
The tenth international conference on II-VI compounds (Part 1)
Conference name
International Conference on II-VI Compounds (10 ; Bremen 2001-09-09)
Author (monograph)
GUTOWSKI, Jürgen (Editor)1 ; HEINKE, Heidrun (Editor)2 ; HOMMEL, Detlef (Editor)2 ; MICHLER, Peter (Editor)1
[1] Institut für Festkörperphysik, Universität Bremen, 28334 Bremen, Germany
[2] Institut für Festkörperphysik, Bereich Halbleiterepitaxie, Universität Bremen, Kufsteiner Str. NW1, 28359 Bremen, Germany
Source

Physica status solidi. B. Basic research. 2002, Vol 229, Num 1, pp 217-220 ; ref : 10 ref

CODEN
PSSBBD
ISSN
0370-1972
Scientific domain
Crystallography; Electronics; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics
Publisher
Wiley, Berlin
Publication country
Germany
Document type
Conference Paper
Language
English
Keyword (fr)
Bande interdite Composé binaire Couche épitaxique Effet physique rayonnement Epitaxie jet moléculaire Faisceau moléculaire Mécanisme croissance Optimisation Prétraitement RHEED Semiconducteur Système 2 dimensions Zinc sulfure S Zn ZnS Composé minéral Métal transition composé
Keyword (en)
Energy gap Binary compounds Epitaxial layers Physical radiation effects Molecular beam epitaxy Molecular beams Growth mechanism Optimization Pretreatment RHEED Semiconductor materials Two-dimensional systems Zinc sulfides Inorganic compounds Transition element compounds
Keyword (es)
Mecanismo crecimiento Pretratamiento
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15A Theory and models of film growth

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy

Pacs
8115H Molecular, atomic, ion, and chemical beam epitaxy

Discipline
Physics and materials science
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
13496087

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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