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Initial stages of Sn adsorption on Si(1 1 1)-(7 x 7)

Author
CUSTANCE, O1 ; BRIHUEGA, I1 ; GOMEZ-RODRIGUEZ, J. M1 ; BARO, A. M1
[1] Departamento de Física de la Materia Condensada, C-III, Universidad Autónoma de Madrid, Cantoblanco, 28049 Madrid, Spain
Conference title
ECOSS-19: proceedings of the 19th European conference on surface science, Madrid, Spain, 5-8 September 2000. Part II
Conference name
ECOSS-19: European Conference on Surface Science (19 ; Madrid 2000-09-05)
Author (monograph)
FARIAS, D (Editor)1 ; GALLEGO, José Maria (Editor)1 ; DE MIGUEL, Juan José (Editor)1 ; PRIETO, José Emilio (Editor)1 ; VAZQUEZ DE PARGA, A. L (Editor)1 ; MICHEL, Enrique G (Editor)1
European Physical Society. Surface and Interface Division, Europe (Funder/Sponsor)
International Union for Vacuum Science, Technique and Applications. Surface Division, Brussels, Belgium (Funder/Sponsor)
[1] Departamento de Fisica de la Materia Condensada and Instituto Universitario de Ciencia de Materiales Nicolas Cabrera, Universidad Autonoma de Madrid, Madrid, Spain
Source

Surface science. 2001, Vol 482-85, pp 1406-1412 ; 2 ; ref : 27 ref

CODEN
SUSCAS
ISSN
0039-6028
Scientific domain
General chemistry, physical chemistry; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics; Polymers, paint and wood industries
Publisher
Elsevier Science, Amsterdam / Elsevier Science, Lausanne / Elsevier Science, New York, NY
Publication country
Netherlands
Document type
Conference Paper
Language
English
Keyword (fr)
Chimisorption Couche monomoléculaire Diffusion superficielle Etain Etude expérimentale Face cristalline Germination cristalline Interface solide solide Mécanisme croissance STM Silicium Structure surface Substrat semiconducteur Surface rugueuse Topographie surface
Keyword (en)
Chemisorption Monolayers Surface diffusion Tin Experimental study Crystal faces Crystal nucleation Solid-solid interfaces Growth mechanism STM Silicon Surface structure Semiconductor substrate Rough surfaces Surface topography
Keyword (es)
Germinación cristalina Mecanismo crecimiento Substrato semiconductor
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35F Diffusion; interface formation

Pacs
6835F Diffusion; interface formation

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
13523732

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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