InAs/GaAs(100) self-assembled quantum dots: arsenic pressure and capping effects
- Author
- RIEL, B. J1 2 ; HINZER, K1 2 ; MOISA, S1 ; FRASER, J1 ; FINNIE, P1 ; PIERCY, P2 ; FAFARD, S1 ; WASILEWSKI, Z. R1
[1] Institute for Microstructural Sciences, National Research Council, Building M50, Montreal Road, Ottawa, Ont., K1A 0R6, Canada
[2] Physics Department, University of Ottawa, Ottawa, Ont., K1A 6N5, Canada - Source
Journal of crystal growth. 2002, Vol 236, Num 1-3, pp 145-154 ; ref : 50 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Keyword (fr)
- Couche autoassemblée Croissance cristalline en phase vapeur Degré recouvrement Déplacement raie Effet pression Epitaxie jet moléculaire Etude expérimentale Gallium arséniure Indium arséniure Nanostructure Photoluminescence Point quantique Pression partielle Relation fabrication propriété Semiconducteur III-V Surcouche As Ga As In GaAs InAs Composé minéral
- Keyword (en)
- Self-assembled layers Crystal growth from vapors Coverage rate Spectral line shift Pressure effects Molecular beam epitaxy Experimental study Gallium arsenides Indium arsenides Nanostructures Photoluminescence Quantum dots Partial pressure Fabrication property relation III-V semiconductors Overlayers Inorganic compounds
- Keyword (es)
- Grado recubrimiento Relación fabricación propiedad
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H67 Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures / 001B70H67H Quantum dots
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Pacs
- 7867H Quantum dots
- Discipline
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 13554769
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0022-0248(01)02391-0 
https://dx.doi.org/10.1016/S0022-0248(01)02391-0
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