Step-bunching in SiC epitaxy: anisotropy and influence of growth temperature
- Author
- SYVÄJÄRVI, M1 ; YAKIMOVA, R1 ; JANZEN, E1
[1] Department of Physics and Measurement Technology, Linköping University, 581 83 Linköping, Sweden - Source
Journal of crystal growth. 2002, Vol 236, Num 1-3, pp 297-304 ; ref : 14 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Keyword (fr)
- Anisotropie Couche mince Couche épaisse Couche épitaxique Croissance cristalline en phase vapeur Croissance latérale Défaut cristallin Défaut surface Dépendance température Energie surface Epitaxie phase liquide Etude expérimentale Gradin Haute température Microscopie force atomique Morphologie Mécanisme croissance Semiconducteur Silicium carbure Sublimation Surface C Si SiC Carbure Composé minéral
- Keyword (en)
- Anisotropy Thin films Thick films Epitaxial layers Crystal growth from vapors Lateral growth Crystal defects Surface defect Temperature dependence Surface energy LPE Experimental study Step High temperature Atomic force microscopy Morphology Growth mechanism Semiconductor materials Silicon carbides Sublimation Surfaces Carbides Inorganic compounds
- Keyword (es)
- Crecimiento lateral Defecto superficie Peldaño Alta temperatura Mecanismo crecimiento
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35B Surface structure and topography
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35M Surface energy; thermodynamic properties
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 13554790
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0022-0248(01)02331-4 
https://dx.doi.org/10.1016/S0022-0248(01)02331-4
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