Growth and characterization of high-purity SiC single crystals
- Author
- AUGUSTINE, G1 ; BALAKRISHNA, V1 ; BRANDT, C. D1
[1] Northrop Grumman Corporation, Science and Technology Center, 1350 Beulah Road, Pittsburgh, PA 15235-5080, United States - Conference title
- American crystal growth and epitaxy 1999
- Conference name
- American Conference on Crystal Growth and Epitaxy (ACCGE) (ACCGE) (11 ; Tucson, Arizona 1999-08-01)
- Author (monograph)
- HOPKINS, R (Editor); SCRIPA, R (Editor)1 ; BALAKRISHNA, V (Editor)2
American Association for Crystal Growth, United States (Funder/Sponsor)
[1] University of Alabama at Birmingham, United States
[2] Northrup-Grumman, United States - Source
Journal of crystal growth. 2000, Vol 211, Num 1-4, pp 339-342 ; ref : 4 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Addition vanadium Champ température Conductivité électrique Croissance cristalline en phase vapeur Densité défaut cristallin Dopage cristal Etat défaut Etude expérimentale Monocristal Semiconducteur type p Silicium carbure Simulation numérique Sublimation C Si Méthode PVT SiC Composé minéral
- Keyword (en)
- Vanadium additions Temperature distribution Electrical conductivity Crystal growth from vapors Crystal defect density Crystal doping Defect states Experimental study Monocrystals p-type conductors Silicon carbides Digital simulation Sublimation Physical vapor transport method Inorganic compounds
- Keyword (es)
- Densidad defecto cristalino
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10B Growth from vapor
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 1356092
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0022-0248(99)00826-X 
https://dx.doi.org/10.1016/S0022-0248(99)00826-X
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