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The photorefractive effect at large modulation depth in semiconductors with multiple defect levels

Author
NGUYEN, N. D1 ; SCHMEITS, M1
[1] Institute of Physics, University of Liège, 4000 Sart-Tilman, Liège, Belgium
Source

Applied physics. B, Lasers and optics (Print). 2002, Vol 74, Num 1, pp 35-42 ; ref : 23 ref

ISSN
0946-2171
Scientific domain
Optics
Publisher
Springer, Berlin
Publication country
Germany
Document type
Article
Language
English
Keyword (fr)
Composé binaire Effet photoréfractif Equation Poisson Etude théorique Gain Indium phosphure Mélange 2 ondes Optique non linéaire Phénomène transitoire Semiconducteur Solution numérique 4265H 4270N In P InP
Keyword (en)
Binary compounds Photorefractive effect Poisson equation Theoretical study Gain Indium phosphides Two wave mixing Nonlinear optics Transients Semiconductor materials Numerical solution
Keyword (es)
Mezcla 2 ondas
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B65 Nonlinear optics / 001B40B65H Phase conjugation, optical mixing; photorefractive and kerr effects

Pascal
001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B70 Optical materials / 001B40B70N Other nonlinear optical materials; photorefractive and semiconductor materials

Discipline
Physics : optics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
13569687

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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