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Step bunching fabrication constraints in silicon carbide

Author
PHELPS, G. J1 ; WRIGHT, N. G1 ; CHESTER, E. G1 ; JOHNSON, C. M1 ; O'NEILL, A. G1
[1] Department of Electrical and Electronic Engineering, University of Newcastle, Newcastle upon Tyne NE1 7RU, United Kingdom
Source

Semiconductor science and technology. 2002, Vol 17, Num 5, pp L17-L21 ; ref : 18 ref

CODEN
SSTEET
ISSN
0268-1242
Scientific domain
Electronics; Optics; Condensed state physics
Publisher
Institute of Physics, Bristol
Publication country
United Kingdom
Document type
Article
Language
English
Keyword (fr)
Bore Composé binaire Formation motif Implantation ion Lithographie Microscopie électronique balayage Orientation cristalline Phénomène surface Recuit Regroupement gradin Silicium carbure Système ordonné Température recuit 4H-SiC B C Si SiC Composé minéral
Keyword (en)
Boron Binary compounds Patterning Ion implantation Lithography Scanning electron microscopy Crystal orientation Surface phenomena Annealing Step bunching Silicon carbides Ordered systems Annealing temperature Inorganic compounds
Keyword (es)
Formacíon motivo Temperatura recocido
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A16 Electron, ion, and scanning probe microscopy / 001B60A16B Transmission, reflection and scanning electron microscopy(including ebic)

Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72W Doping and impurity implantation in other materials

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
13632930

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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