Stencil mask ion implantation technology : Special section on issues related to semiconductor manufacturing at technology nodes below 70 nm
- Author
- SHIBATA, Takeshi1 ; SUGURO, Kyoichi1 ; SUGIHARA, Kazuyoshi1 ; NISHIHASHI, Tsutomu2 ; FUJIYAMA, Junki2 ; SAKURADA, Yuzo2
[1] Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, Yokohama 235-8522, Japan
[2] Semiconductor Equipment Group, ULVAC Inc., Shizuoka 410-1231, Japan - Source
IEEE transactions on semiconductor manufacturing. 2002, Vol 15, Num 2, pp 183-188 ; ref : 5 ref
- ISSN
- 0894-6507
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Fabrication microélectronique Implantation ion Procédé fabrication Transistor MOSFET
- Keyword (en)
- Microelectronic fabrication Ion implantation Manufacturing process MOSFET
- Keyword (es)
- Fabricación microeléctrica Implantación ión Procedimiento fabricación
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 13653024
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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