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Spin-galvanic effect

Author
GANICHEV, S. D1 2 ; IVCHENKO, E. L2 ; BEL'KOV, V. V2 ; TARASENKO, S. A2 ; SOLLINGER, M1 ; WEISS, D1 ; WEGSCHEIDER, W1 3 ; PRETTI, W1
[1] Fakultät für Physik, Universitat Regensburg, 93040 Regensburg, Germany
[2] A.F. Ioffe Physico-Technical Institute of the RAS, 194021 St Petersburg, Russian Federation
[3] Walter Schottky Institut TU München, 85748 Garching, Germany
Source

Nature (London). 2002, Vol 417, Num 6885, pp 153-156 ; ref : 27 ref

CODEN
NATUAS
ISSN
0028-0836
Scientific domain
Multidisciplinary
Publisher
Nature Publishing, London
Publication country
United Kingdom
Document type
Article
Language
Russian
Keyword (fr)
Aluminium arséniure Conductivité électrique Effet champ magnétique Etat spin Etude expérimentale Gallium arséniure Gaz électron 2 dimensions Hétérostructure Phénomène transport Puits quantique Semiconducteur Sous bande Spin flip Spin polarisé Transport spin polarisé
Keyword (en)
Aluminium arsenides Electrical conductivity Magnetic field effects Spin state Experimental study Gallium arsenides Two-dimensional electron gas Heterostructures Transport processes Quantum wells Semiconductor materials Subband Spin flip Polarized spin Polarized spin transport
Keyword (es)
Estado espín Subbanda Spin polarizado
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B25 Spin polarized transport

Pacs
7225M Spin transport through interfaces

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
13668755

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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