Growth and characterization of high-quality faceted PbS single crystals for use as substrate in mid-infrared laser diode
- Author
- ABE, Seishi1 ; MASUMOTO, Katashi1
[1] The Research Institute for Electric and Magnetic Materials, Sendai 982-0807, Japan - Source
Nippon Kinzoku Gakkaishi (1952). = Journal of the Japan Institute of Metals (1952). 2002, Vol 66, Num 3, pp 188-193 ; ref : 16 ref
- CODEN
- NIKGAV
- ISSN
- 0021-4876
- Scientific domain
- Metallurgy, welding
- Publisher
- Nippon Kinzoku Gakkai, Sendai
- Publication country
- Japan
- Document type
- Article
- Language
- Japanese
- Keyword (fr)
- Caractérisation Chalcogénure Croissance cristalline Diode laser Etude expérimentale Monocristal Phase vapeur Plomb sulfure Propriété électrique Semiconducteur
- Keyword (en)
- Characterization Chalcogenides Crystal growth Laser diodes Experimental study Monocrystals Vapor phase Lead sulfides Electrical properties Semiconductor materials
- Keyword (es)
- Caracterización
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10B Growth from vapor
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 13691996
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.2320/jinstmet1952.66.3_188 
https://dx.doi.org/10.2320/jinstmet1952.66.3_188
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