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Control of polarity of heteroepitaxial ZnO films by interface engineering

Author
HONG, Soon-Ku1 ; HANADA, Takashi1 ; CHEN, Yefen1 ; KO, Hang-Ju1 ; YAO, Takafumi1 ; IMAI, Daisuke2 ; ARAKI, Kiyoaki2 ; SHINOHARA, Makoto2
[1] Institute for Materials Research, Tohoku University, Sendai 980-8677, Japan
[2] Surface Analysis and Semiconductor Equipment Division, Shimadzu Co., Kanagawa 259-1304, Japan
Conference title
Proceedings of the Eighth International Conference on the Formation of Semiconductor Interfaces, Sapporo, Japan, June 10-15, 2001
Conference name
ICFSI-8 International Conference on the Formation of Semiconductor Interfaces (8 ; Sapporo 2001-06-10)
Author (monograph)
OKUMURA, Tsugunori (Editor)1 ; FUKUI, Takashi (Editor); HASEGAWA, Hideki (Editor)
The Japan Society of Applied Physics, Japan (Funder/Sponsor)
Ministry of Education, Culture, Sports, Science and Technology ; The International Scientific Exchange Program, Japan (Funder/Sponsor)
Hokkaido University ; Research Center for Integrated Quantum Electronics (RCIQE), Japan (Funder/Sponsor)
[1] Department of Electrical Engineering, Tokyo Metropolitan University, Minami-ohsawa, Hachioji, Tokyo 192 0397, Japan
Source

Applied surface science. 2002, Vol 190, Num 1-4, pp 491-497 ; ref : 7 ref

ISSN
0169-4332
Scientific domain
General chemistry, physical chemistry; Crystallography; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics
Publisher
Elsevier Science, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Keyword (fr)
Analyse diffusion ion Composé binaire Couche interfaciale Couche mince Gallium nitrure Hétérostructure Inversion polarité Magnésium oxyde Microscopie électronique transmission Polarité Semiconducteur Structure interface Zinc oxyde Composé minéral Ga N GaN Mg O MgO Métal transition composé O Zn ZnO
Keyword (en)
Ion scattering analysis Binary compounds Interfacial layer Thin films Gallium nitrides Heterostructures Polarity inversion Magnesium oxides Transmission electron microscopy Polarity Semiconductor materials Interface structure Zinc oxides
Keyword (es)
Capa interfacial Inversión polaridad Polaridad
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35C Interface structure and roughness

Pacs
6835C Interface structure and roughness

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
13725250

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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