Monte Carlo simulation of thin film growth with defect formation: Application to via filling
- Author
- KANEKO, Yutaka1 ; HIWATARI, Yasuaki2 ; OHARA, Katsuhiko3 ; MURAKAMI, Toru3
[1] Graduate School of Informatics, Kyoto University, Yoshida Hon-machi, Sakyo-ku, Kyoto-shi, Kyoto 606-8501, Japan
[2] Faculty of Science, Kanazawa University, Kakuma-machi, Kanazawa-shi, Ishikawa 920-1192, Japan
[3] Central Research Laboratory, C. Uyemura & Co., Ltd., 1-5-1 Deguchi, Hirakata-shi, Osaka 573-0065, Japan - Source
Hyomen gijutsu. = Journal of the Surface Finishing Society of Japan. 2002, Vol 53, Num 4, pp 250-255 ; ref : 12 ref
- ISSN
- 0915-1869
- Scientific domain
- Metallurgy, welding
- Publisher
- Hyomen Gijutsu Kyokai, Tokyo
- Publication country
- Japan
- Document type
- Article
- Language
- Japanese
- Keyword (fr)
- Adsorption Cavité dans réseau Croissance film Diffusion superficielle Modèle 2 dimensions Mécanisme croissance Méthode Monte Carlo Rapport aspect Simulation numérique Trou interconnexion
- Keyword (en)
- Adsorption Void Film growth Surface diffusion Two dimensional model Growth mechanism Monte Carlo method Aspect ratio Numerical simulation Via hole
- Keyword (es)
- Adsorción Cavidad en red Difusión superficial Modelo 2 dimensiones Mecanismo crecimiento Método Monte Carlo Relación dimensional Simulación numérica Agujero interconexión
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03D Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 13744410
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.4139/sfj.53.250 
https://dx.doi.org/10.4139/sfj.53.250
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