Strained Si/SiGe n-channel MOSFETs: impact of cross-hatching on device performance
- Author
- OLSEN, S. H1 ; O'NEILL, A. G1 ; NORRIS, D. J2 ; CULLIS, A. G2 ; WOODS, N. J3 ; ZHANG, J3 ; FOBELETS, K4 ; KEMHADJIAN, H. A5
[1] Department of Electrical and Electronic Engineering, University of Newcastle, Newcastle upon Tyne NE1 7RU, United Kingdom
[2] Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, United Kingdom
[3] Physics Department, Centre for Electronic Materials and Devices, Imperial College of Science, Technology and Medicine, Prince Consort Road, London SW7 2BW, United Kingdom
[4] Department of Electrical and Electronic Engineering, Imperial College of Science, Technology and Medicine, Prince Consort Road, London SW7 2BT, United Kingdom
[5] Department of Electronics and Computer Science, University of Southampton, Southampton SO17 1BJ, United Kingdom - Source
Semiconductor science and technology. 2002, Vol 17, Num 7, pp 655-661 ; ref : 38 ref
- CODEN
- SSTEET
- ISSN
- 0268-1242
- Scientific domain
- Electronics; Optics; Condensed state physics
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Alliage Ge Si Alliage binaire Alliage semiconducteur Canal n Caractéristique électrique Choc mécanique Déformation mécanique Epaisseur Epitaxie Fluctuation Interface Nanostructure Optimisation Pastille électronique Rugosité Silicium oxyde Transistor MOSFET Vitesse déformation Vitesse oxydation Ge Si O Si Si SiGe SiO2 Composé minéral
- Keyword (en)
- Ge-Si alloys Binary alloy Semiconductor alloys n channel Electrical characteristic Mechanical shock Mechanical deformation Thickness Epitaxy Fluctuations Interface Nanostructure Optimization Wafer Roughness Silicon oxides MOSFET Strain rate Oxidation rate Inorganic compound
- Keyword (es)
- Aleación binaria Canal n Característica eléctrica Choque mecánico Deformación mecánica Espesor Epitaxia Fluctuación Interfase Nanoestructura Optimización Pastilla electrónica Rugosidad Velocidad deformación Velocidad oxidación Compuesto inorgánico
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 13755066
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0268-1242/17/7/303 
https://dx.doi.org/10.1088/0268-1242/17/7/303
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:26:\"10.1088\/0268-1242\/17\/7\/303\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:82:\"Strained Si\/SiGe n-channel MOSFETs: impact of cross-hatching on device performance\";s:9:\"\u0000*\u0000jtitle\";s:36:\"Semiconductor science and technology\";s:9:\"\u0000*\u0000stitle\";s:22:\"Semicond. sci. technol\";s:7:\"\u0000*\u0000date\";s:4:\"2002\";s:9:\"\u0000*\u0000volume\";s:2:\"17\";s:8:\"\u0000*\u0000issue\";s:1:\"7\";s:8:\"\u0000*\u0000spage\";s:3:\"655\";s:8:\"\u0000*\u0000epage\";s:3:\"661\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0268-1242\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"OLSEN\";s:10:\"\u0000*\u0000aufirst\";s:4:\"S. H\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:13:\"O'NEILL, A. G\";i:1;s:12:\"NORRIS, D. J\";i:2;s:12:\"CULLIS, A. G\";i:3;s:11:\"WOODS, N. J\";i:4;s:8:\"ZHANG, J\";i:5;s:11:\"FOBELETS, K\";i:6;s:16:\"KEMHADJIAN, H. A\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"SSTEET\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:82:\"Strained Si\/SiGe n-channel MOSFETs: impact of cross-hatching on device performance\";s:8:\"\u0000*\u0000place\";s:7:\"Bristol\";s:6:\"\u0000*\u0000pub\";s:20:\"Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:26:\"10.1088\/0268-1242\/17\/7\/303\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:82:\"Strained Si\/SiGe n-channel MOSFETs: impact of cross-hatching on device performance\";s:9:\"\u0000*\u0000jtitle\";s:36:\"Semiconductor science and technology\";s:9:\"\u0000*\u0000stitle\";s:22:\"Semicond. sci. technol\";s:7:\"\u0000*\u0000date\";s:4:\"2002\";s:9:\"\u0000*\u0000volume\";s:2:\"17\";s:8:\"\u0000*\u0000issue\";s:1:\"7\";s:8:\"\u0000*\u0000spage\";s:3:\"655\";s:8:\"\u0000*\u0000epage\";s:3:\"661\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0268-1242\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"OLSEN\";s:10:\"\u0000*\u0000aufirst\";s:4:\"S. H\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:13:\"O'NEILL, A. G\";i:1;s:12:\"NORRIS, D. J\";i:2;s:12:\"CULLIS, A. G\";i:3;s:11:\"WOODS, N. J\";i:4;s:8:\"ZHANG, J\";i:5;s:11:\"FOBELETS, K\";i:6;s:16:\"KEMHADJIAN, H. A\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"SSTEET\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:82:\"Strained Si\/SiGe n-channel MOSFETs: impact of cross-hatching on device performance\";s:8:\"\u0000*\u0000place\";s:7:\"Bristol\";s:6:\"\u0000*\u0000pub\";s:20:\"Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:26:\"10.1088\/0268-1242\/17\/7\/303\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:26:\"10.1088\/0268-1242\/17\/7\/303\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:82:\"Strained Si\/SiGe n-channel MOSFETs: impact of cross-hatching on device performance\";s:9:\"\u0000*\u0000jtitle\";s:36:\"Semiconductor science and technology\";s:9:\"\u0000*\u0000stitle\";s:22:\"Semicond. sci. technol\";s:7:\"\u0000*\u0000date\";s:4:\"2002\";s:9:\"\u0000*\u0000volume\";s:2:\"17\";s:8:\"\u0000*\u0000issue\";s:1:\"7\";s:8:\"\u0000*\u0000spage\";s:3:\"655\";s:8:\"\u0000*\u0000epage\";s:3:\"661\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0268-1242\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"OLSEN\";s:10:\"\u0000*\u0000aufirst\";s:4:\"S. H\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:13:\"O'NEILL, A. G\";i:1;s:12:\"NORRIS, D. J\";i:2;s:12:\"CULLIS, A. G\";i:3;s:11:\"WOODS, N. J\";i:4;s:8:\"ZHANG, J\";i:5;s:11:\"FOBELETS, K\";i:6;s:16:\"KEMHADJIAN, H. A\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"SSTEET\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:82:\"Strained Si\/SiGe n-channel MOSFETs: impact of cross-hatching on device performance\";s:8:\"\u0000*\u0000place\";s:7:\"Bristol\";s:6:\"\u0000*\u0000pub\";s:20:\"Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:26:\"10.1088\/0268-1242\/17\/7\/303\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:82:\"Strained Si\/SiGe n-channel MOSFETs: impact of cross-hatching on device performance\";s:9:\"\u0000*\u0000jtitle\";s:36:\"Semiconductor science and technology\";s:9:\"\u0000*\u0000stitle\";s:22:\"Semicond. sci. technol\";s:7:\"\u0000*\u0000date\";s:4:\"2002\";s:9:\"\u0000*\u0000volume\";s:2:\"17\";s:8:\"\u0000*\u0000issue\";s:1:\"7\";s:8:\"\u0000*\u0000spage\";s:3:\"655\";s:8:\"\u0000*\u0000epage\";s:3:\"661\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0268-1242\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"OLSEN\";s:10:\"\u0000*\u0000aufirst\";s:4:\"S. H\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:13:\"O'NEILL, A. G\";i:1;s:12:\"NORRIS, D. J\";i:2;s:12:\"CULLIS, A. G\";i:3;s:11:\"WOODS, N. J\";i:4;s:8:\"ZHANG, J\";i:5;s:11:\"FOBELETS, K\";i:6;s:16:\"KEMHADJIAN, H. A\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"SSTEET\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:82:\"Strained Si\/SiGe n-channel MOSFETs: impact of cross-hatching on device performance\";s:8:\"\u0000*\u0000place\";s:7:\"Bristol\";s:6:\"\u0000*\u0000pub\";s:20:\"Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:26:\"10.1088\/0268-1242\/17\/7\/303\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:82:\"Strained Si\/SiGe n-channel MOSFETs: impact of cross-hatching on device performance\";s:9:\"\u0000*\u0000jtitle\";s:36:\"Semiconductor science and technology\";s:9:\"\u0000*\u0000stitle\";s:22:\"Semicond. sci. technol\";s:7:\"\u0000*\u0000date\";s:4:\"2002\";s:9:\"\u0000*\u0000volume\";s:2:\"17\";s:8:\"\u0000*\u0000issue\";s:1:\"7\";s:8:\"\u0000*\u0000spage\";s:3:\"655\";s:8:\"\u0000*\u0000epage\";s:3:\"661\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0268-1242\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"OLSEN\";s:10:\"\u0000*\u0000aufirst\";s:4:\"S. H\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:13:\"O'NEILL, A. G\";i:1;s:12:\"NORRIS, D. J\";i:2;s:12:\"CULLIS, A. G\";i:3;s:11:\"WOODS, N. J\";i:4;s:8:\"ZHANG, J\";i:5;s:11:\"FOBELETS, K\";i:6;s:16:\"KEMHADJIAN, H. A\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"SSTEET\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:82:\"Strained Si\/SiGe n-channel MOSFETs: impact of cross-hatching on device performance\";s:8:\"\u0000*\u0000place\";s:7:\"Bristol\";s:6:\"\u0000*\u0000pub\";s:20:\"Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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