Surface passivation of GaAs
- Author
- BHORASKAR, S. V1
[1] Department of Physics, University of Pune, Pune-411 007, India - Conference title
- Physics of semiconductor devices (Delhi, 14-18 December 1999)
- Conference name
- International workshop on the physics of semiconductor devices (10 ; Delhi 1999-12-14)
- Author (monograph)
- Vikram Kumar (Editor); Agarwal, S.K (Editor)
International Society for Optical Engineering, Bellingham WA, United States (Organiser of meeting) - Source
SPIE proceedings series. 2000, pp 135-141 ; ref : 11 ref
- ISBN
- 0-8194-3601-1
- Scientific domain
- Electronics; Energy; Metrology and instrumentation; Optics; Condensed state physics; Physics; Telecommunications
- Publisher
- SPIE, Bellingham WA
- Publication country
- International
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Emission exoélectronique Emission thermostimulée Etat électronique surface Etude expérimentale Gallium arséniure Nanocristal Passivation Polymérisation décharge électrique Recombinaison porteur charge Recombinaison superficielle Traitement surface Zinc séléniure As Ga GaAs Se Zn ZnSe
- Keyword (en)
- Exoelectron emission Thermostimulated emission Surface electron state Experimental study Gallium arsenides Nanocrystal Passivation Glow discharge polymerization Charge carrier recombination Surface recombination Surface treatments Zinc selenides
- Keyword (es)
- Emisión termoestimulada Estado electrónico superficie Nanocristal Polimerización descarga eléctrica Recombinación portador carga
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C20 Surface and interface electron states / 001B70C20A Surface states, band structure, electron density of states
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 1378859
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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