SiC and GaN transistors: Is there one winner for microwave power applications?
- Author
- TREW, R. J1
[1] Electrical and Computer Engineering Department, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061, United States - Issue title
- Special Issue on Wide Bandgap Semiconductor Devices
- Author (monograph)
- ZOLPER, John C (Editor)1 ; SHANABROOK, Ben V (Editor)2
[1] Defense Advanced Research Projects Agency, Washington, DC 22203-1714, United States
[2] Naval Research Laboratory, Washington, DC 20375-5000, United States - Source
Proceedings of the IEEE. 2002, Vol 90, Num 6, pp 1032-1047 ; ref : 70 ref
- CODEN
- IEEPAD
- ISSN
- 0018-9219
- Scientific domain
- Electronics; Computer science; Telecommunications
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Amplificateur puissance Caractéristique fonctionnement Dispositif hyperfréquence Gallium nitrure Semiconducteur bande interdite large Silicium carbure Transistor effet champ barrière Schottky Transistor hétérojonction Transistor puissance
- Keyword (en)
- Power amplifier Performance characteristic Microwave device Gallium nitride Wide band gap semiconductors Silicon carbide Metal semiconductor field effect transistor Heterojunction transistor Power transistor
- Keyword (es)
- Amplificador potencia Característica funcionamiento Dispositivo hiperfrecuencia Galio nitruro Silicio carburo Transistor efecto campo barrera Schottky Transistor heterounión Transistor potencia
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F05 Other multijunction devices. Power transistors. Thyristors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 13835311
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/JPROC.2002.1021568 
https://dx.doi.org/10.1109/JPROC.2002.1021568
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