A process for photoresist removal after aluminum etching using plasma treatment in a gas containing hydrogen
- Author
- SAITO, Makoto1 2 ; TOUNO, Ichiro2 ; OMIYA, Kayoko2 ; HOMMA, Tetsuya1 ; NAGATOMO, Takao1
[1] Postgraduate Courses of Functional Control Systems, Shibaura Institute of Technology, Minato-ku, Tokyo 108-8548, Japan
[2] Toshiba Corporation, Corporate Manufacturing Engineering Center, Isogo-ku, Yokohama-shi, Kanagawa 235-0017, Japan - Source
Journal of the Electrochemical Society. 2002, Vol 149, Num 8, pp G451-G454 ; ref : 10 ref
- CODEN
- JESOAN
- ISSN
- 0013-4651
- Scientific domain
- General chemistry, physical chemistry; Crystallography; Electrical engineering; Condensed state physics
- Publisher
- Electrochemical Society, Pennington, NJ
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium Caractérisation Gravure plasma Microscopie électronique balayage Photorésist Spectrométrie photoélectron Spectrométrie émission Traitement surface
- Keyword (en)
- Aluminium Characterization Plasma etching Scanning electron microscopy Photoresists Photoelectron spectroscopy Emission spectroscopy Surface treatments
- Keyword (es)
- Caracterización Grabado plasma
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A65 Surface treatments
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 13845528
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1149/1.1485777 
https://dx.doi.org/10.1149/1.1485777
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