Composite and multilayer ferroelectric thin films: processing, properties and applications
- Author
- JAYADEVAN, K. P1 ; TSENG, T. Y1
[1] Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan, Province of China - Source
Journal of materials science. Materials in electronics. 2002, Vol 13, Num 8, pp 439-459 ; ref : 186 ref
- ISSN
- 0957-4522
- Scientific domain
- Electronics; Condensed state physics
- Publisher
- Springer, Norwell, MA
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Article synthèse Composant électronique Couche mince ferroélectrique Céramique ferroélectrique Dépôt laser pulsé Epitaxie jet moléculaire Hétérojonction Matériau composite Multicouche Méthode MOCVD Méthode couche atomique Procédé fabrication Propriété diélectrique Périodicité Superréseau
- Keyword (en)
- Review Electronic component Ferroelectric thin films Ferroelectric ceramics Pulsed laser deposition Molecular beam epitaxy Heterojunctions Composite material Multiple layer MOCVD Atomic layer method Manufacturing process Dielectric properties Periodicity Superlattice
- Keyword (es)
- Artículo síntesis Componente electrónico Cerámica ferroeléctrica Material compuesto Capa múltiple Método capa atómica Procedimiento fabricación Propiedad dieléctrica Periodicidad Superred
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 13872252
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1023/A:1016129318548 
https://dx.doi.org/10.1023/A:1016129318548
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