Effect of impurities and structural defects on the transport properties of n-type GaAs crystals
- Author
- KORSHUNOV, F. P1 ; KURILOVICH, N. F1 ; PROKHORENKO, T. A1 ; SHESHOLKO, V. K1
[1] Institute of Solid-State and Semiconductor Physics, Belarussian Academy of Sciences, ul. Brovki 17, Minsk, 220072, Belarus - Source
Inorganic materials. 2002, Vol 38, Num 8, pp 784-789 ; ref : 9 ref
- CODEN
- INOMAF
- ISSN
- 0020-1685
- Scientific domain
- Inorganic chemistry; Crystallography; Condensed state physics
- Publisher
- Springer, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Addition germanium Addition sélénium Addition tellure Compensation Composé binaire Densité porteur charge Dopage Défaut cristallin Dépendance température Etude expérimentale Gallium arséniure Impureté Mobilité porteur charge Monocristal Phénomène transport Semiconducteur Transmutation As Ga GaAs Transmutation neutron Composé minéral
- Keyword (en)
- Germanium additions Selenium additions Tellurium additions Compensation Binary compounds Carrier density Doping Crystal defects Temperature dependence Experimental study Gallium arsenides Impurities Carrier mobility Monocrystals Transport processes Semiconductor materials Transmutation Inorganic compounds
- Keyword (es)
- Doping
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B20 Conductivity phenomena in semiconductors and insulators / 001B70B20F Low-field transport and mobility; piezoresistance
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B20 Conductivity phenomena in semiconductors and insulators / 001B70B20J Charge carriers: generation, recombination, lifetime, and trapping
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 13892856
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1023/A:1019770609713 
https://dx.doi.org/10.1023/A:1019770609713
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