Strain relaxation of InP film directly grown on GaAs patterned compliant substrate
- Author
- ZHICHENG ZHANG1 ; SHAOYAN YANG1 ; FUQIANG ZHANG1 ; DABING LI1 ; YONGHAI CHEN1 ; ZHANGUO WANG1
[1] Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China - Source
Journal of crystal growth. 2002, Vol 243, Num 1, pp 71-76 ; ref : 18 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Keyword (fr)
- Accommodation réseau Complaisance Contrainte résiduelle Couche mince Couche épitaxique Croissance cristalline en phase vapeur Diffraction RX Dislocation Epitaxie jet moléculaire Etude expérimentale Formation motif Gallium arséniure Hétéroépitaxie Indium phosphure Microscopie électronique balayage Morphologie Méthode MOCVD Phosphure Photoluminescence Prétraitement Relaxation contrainte Semiconducteur III-V Substrat Surface Traitement surface In P InP Substrat GaAs Arséniure Composé minéral
- Keyword (en)
- Mismatch lattice Compliance Residual stresses Thin films Epitaxial layers Crystal growth from vapors XRD Dislocations Molecular beam epitaxy Experimental study Patterning Gallium arsenides Heteroepitaxy Indium phosphides Scanning electron microscopy Morphology MOCVD Phosphides Photoluminescence Pretreatment Stress relaxation III-V semiconductors Substrates Surfaces Surface treatments Arsenides Inorganic compounds
- Keyword (es)
- Acomodación red Formacíon motivo Heteroepitaxia Pretratamiento
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H60 Physical properties of thin films, nonelectronic / 001B60H60B Mechanical and acoustical properties
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 13919031
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0022-0248(02)01476-8 
https://dx.doi.org/10.1016/S0022-0248(02)01476-8
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