Strained GaInAsP/InP multiple quantum well structures grown by solid source molecular beam epitaxy
- Author
- SUN, L1 ; ZHANG, D. H1
[1] School of Electrical and Electronic Engineering, S2, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore - Source
Journal of crystal growth. 2002, Vol 245, Num 1-2, pp 9-14 ; ref : 24 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Keyword (fr)
- Accommodation réseau Addition silicium Caractérisation Couche mince Croissance cristalline en phase vapeur Densité défaut cristallin Dopage cristal Effet impureté Epitaxie jet moléculaire Etude expérimentale Gallium arséniure Gallium phosphure Indium arséniure Indium phosphure Multicouche Méthode SSMBE Perfection cristalline Puits quantique contraint Semiconducteur III-V Semiconducteur type n As Ga In P GaInAsP:Si In P InP Composé minéral
- Keyword (en)
- Mismatch lattice Silicon additions Characterization Thin films Crystal growth from vapors Crystal defect density Crystal doping Impurity effect Molecular beam epitaxy Experimental study Gallium arsenides Gallium phosphides Indium arsenides Indium phosphides Multilayers Solid source molecular beam epitaxy Crystal perfection Strained quantum well III-V semiconductors n-type conductors Inorganic compounds
- Keyword (es)
- Acomodación red Caracterización Densidad defecto cristalino Efecto impureza Método SSMBE Perfección cristalina Pozo cuántico forzado
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H65 Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 13956410
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0022-0248(02)01649-4 
https://dx.doi.org/10.1016/S0022-0248(02)01649-4
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