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Numerical simulation of carbon reflection on silicon substrate in chemical vapor deposition method by molecular dynamics

Author
KAYABA, T1 ; HAMADA, Y1 ; SAKA, M1
[1] Tohoku University, Department of Mechanical Engineering, Aza-aoba 01, Aramaki, Aoba-ku, Sendai, 980-8579, Japan
Conference title
Experimental mechanics (Singapore, 29 November - 1 December 2000)
Conference name
International conference on experimental mechanics (2 ; Singapore 2000-11-29)
Author (monograph)
Fook Siong Chau (Editor); Chenggen Quan (Editor)
International Society for Optical Engineering, Bellingham WA, United States (Organiser of meeting)
Source

SPIE proceedings series. 2001, pp 341-344 ; ref : 1 ref

ISBN
0-8194-3998-3
Scientific domain
Electronics; Mechanics acoustics; Metrology and instrumentation; Optics; Physics; Telecommunications
Publisher
SPIE, Bellingham WA
Publication country
International
Document type
Conference Paper
Language
English
Keyword (fr)
Adsorption Carbone Collision atomique Diamant Dispositif couche mince Dynamique moléculaire Dépôt chimique phase vapeur Modélisation Monocristal Nucléation Réflexion Silicium Simulation numérique
Keyword (en)
Adsorption Carbon Atom collisions Diamonds Thin film devices Molecular dynamics CVD Modelling Monocrystals Nucleation Reflection Silicon Digital simulation
Keyword (es)
Dinámica molecular
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H20 Optical properties of bulk materials and thin films / 001B70H20C Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10A Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80C Rheology / 001B80C10 Fundamentals and general

Pacs
7820C Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Pacs
8110A Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation

Discipline
Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
14044682

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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