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Evaluation of electron beam broadening due to the specimen in analytical electron microscopy

Author
OIKAWA, Testuo1 ; LEE, Chang-Woo2 ; KONDO, Yukihito1 ; SHINDO, Daisuke2 ; KONNO, Kijiro3
[1] Application and Reseach Center, JEOL Ltd., Tokyo 196-8558, Japan
[2] Institute for Advanced Materials Processing, Tohoku University, Sendai 980-8577, Japan
[3] Faculty of Engineering, Science University of Tokyo, Tokyo 162-8601, Japan
Source

Nippon Kinzoku Gakkaishi (1952). = Journal of the Japan Institute of Metals (1952). 2001, Vol 65, Num 5, pp 434-436 ; ref : 7 ref

CODEN
NIKGAV
ISSN
0021-4876
Scientific domain
Metallurgy, welding
Publisher
Nippon Kinzoku Gakkai, Sendai
Publication country
Japan
Document type
Article
Language
Japanese
Keyword (fr)
Epaisseur Etude expérimentale Faisceau électronique Magnésium oxyde Microscopie électronique analytique Microscopie électronique transmission Monocristal Phase amorphe Résolution spatiale Silicium oxyde Silicium Sonde électronique
Keyword (en)
Thickness Experimental study Electron beam Magnesium oxides Analytical electron microscopy Transmission electron microscopy Monocrystals Amorphous phase Spatial resolution Silicon oxides Silicon Electron probes
Keyword (es)
Haz electrónico Microscopía electrónica analítica Fase amorfa
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness

Pacs
6855J Structure and morphology; thickness

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
14076488

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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