Surface atomic process of incorporation of excess arsenic in molecular-beam epitaxy of GaAs
- Author
- SUDA, A1 ; OTSUKA, N1
[1] School of Materials Science, Japan Advanced Institute of Science and Technology, Asahidai 1-1, Tatsunokuchi, Nomigun, Ishikawa 923-1292, Japan - Source
Surface science. 2000, Vol 458, Num 1-3, pp 162-172 ; ref : 24 ref
- Publisher
- Elsevier Science, Amsterdam
/
Elsevier Science, Lausanne
/
Elsevier Science, New York, NY
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Keyword (fr)
- Epitaxie jet moléculaire Etude expérimentale Gallium arséniure Matériau semiconducteur Mécanisme croissance As Ga GaAs
- Keyword (en)
- Molecular beam epitaxy Experimental study Gallium arsenides Semiconductor materials Growth mechanism
- Keyword (es)
- Mecanismo crecimiento
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 1409299
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0039-6028(00)00435-0 
https://dx.doi.org/10.1016/S0039-6028(00)00435-0
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