Preparation and characterization of nickel sulphide thin films using successive ionic layer adsorption and reaction (SILAR) method
- Author
- SARTALE, S. D1 ; LOKHANDE, C. D1
[1] Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, Maharastra, India - Source
Materials chemistry and physics. 2001, Vol 72, Num 1, pp 101-104 ; ref : 14 ref
- CODEN
- MCHPDR
- ISSN
- 0254-0584
- Scientific domain
- Chemistry; Metallurgy, welding; Physics
- Publisher
- Elsevier, Lausanne
- Publication country
- Switzerland
- Document type
- Article
- Language
- English
- Keyword (fr)
- Couche mince Diffraction RX Etude expérimentale Microscopie électronique balayage Nickel sulfure Procédé dépôt Propriété optique Propriété électrique
- Keyword (en)
- Thin films XRD Experimental study Scanning electron microscopy Nickel sulfides Deposition process Optical properties Electrical properties
- Keyword (es)
- Procedimiento revestimiento
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15N Solid phase epitaxy; growth from solid phases
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 14107316
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0254-0584(01)00314-5 
https://dx.doi.org/10.1016/S0254-0584(01)00314-5
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