Reliability issues of ultra thin silicon nitride (a-SiN:H) by hot wire CVD for deep sub-micron CMOS technologies
- Author
- WAGHMARE, P. C1 ; PATIL, S. B1 ; KUMBHAR, A1 ; DUSANE, R. O1 ; RAMGOPAL RAO, V2
[1] Department of Metallurgy and Material Science, Indian Institute of Technology, Bombay, Mumbai-400076, India
[2] Department of Electrical Engineering, Indian Institute of Technology, Bombay, Mumbai-400076, India - Conference title
- Physics of semiconductor devices (Delhi, 11-15 December 2001)
- Conference name
- IWPSD : International workshop on the physics of semiconductor devices (11 ; Delhi 2001-12-11)
- Author (monograph)
- Kumar, Vikram (Editor); Basu, P.K (Editor)
International Society for Optical Engineering, Bellingham WA, United States (Organiser of meeting) - Source
SPIE proceedings series. 2002 ; 2Vol, pp 1418-1420 ; ref : 3 ref
- ISBN
- 0-8194-4500-2
- Scientific domain
- Electronics; Optics; Physics; Telecommunications
- Publisher
- SPIE, Bellingham WA
- Publication country
- International
- Document type
- Conference Paper
- Language
- English
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03B Testing, measurement, noise and reliability
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 14181759
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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