Dislocation luminescence in nitrogen-doped Czochralski and float zone silicon
- Author
- BINETTI, S1 ; SOMASCHINI, R1 ; LE DONNE, A1 ; LEONI, E1 ; PIZZINI, S1 ; LI, D1 2 ; YANG, D2
[1] INFM and Department of Material Science, University of Milano-Bicocca, Milano, Italy
[2] State Key Laboratory of Silicon Material, Zhejiang University, Hangzhou 310027, China - Conference title
- Special issue containing papers presented at the Conference on Extended Defects in Semiconductors-2002 (EDS 2002), Bologna, Italy, 1-6 June 2002
- Conference name
- EDS2002 Conference on Extended Defects in Semiconductors (Bologna 2002-06-01)
- Author (monograph)
- CAVALLINI, A (Editor)1 ; PIZZINI, S (Editor)2
[1] INFM and Dipartimento di Fisica, Universitá di Bologna, Italy
[2] INFM and Department of Materials Science, 20126 Milano, Italy - Source
Journal of physics. Condensed matter (Print). 2002, Vol 14, Num 48, pp 13247-13254, 8 p ; ref : 19 ref
- CODEN
- JCOMEL
- ISSN
- 0953-8984
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Addition azote Croissance cristalline en phase fondue Dislocation Dopage Déformation plastique Etude expérimentale Méthode Czochralski Oxygène Photoluminescence Précipité Semiconducteur Silicium Zone flottante Si:N Non métal
- Keyword (en)
- Nitrogen additions Crystal growth from melts Dislocations Doping Plastic deformation Experimental study Czochralski method Oxygen Photoluminescence Precipitates Semiconductor materials Silicon Floating zone Nonmetals
- Keyword (es)
- Doping Zona flotante
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72Y Interaction between different crystal defects; gettering effect
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H55 Photoluminescence / 001B70H55A Elemental semiconductors
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 14372467
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0953-8984/14/48/375 
https://dx.doi.org/10.1088/0953-8984/14/48/375
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