Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs
- Author
- LONGO, M1 ; MAGNANINI, R1 ; PARISINI, A1 ; TARRICONE, L1 ; CARBOGNANI, A1 ; BOCCHI, C2 ; GOMBIA, E2
[1] Istituto Nazionale di Fisica della Materia, Dipartimento di Fisica, Università di Parma, Parco Area delle Scienze 7A, 43100, Parma, Italy
[2] Istituto IMEM-CNR, Parco Area delle Scienze 37a, 43010, Parma, Italy - Conference title
- ICMOVPE-XI: Proceedings of the Eleventh International Conference on Metalorganic Vapor Phase Epitaxy, Berlin, Germany, 3-7 June 2002
- Conference name
- ICMOVPE-XI International Conference on Metalorganic Vapor Phase Epitaxy (11 ; Berlin 2002-06-03)
- Author (monograph)
- KROST, Alois (Editor)1 ; MULLIN, J. Brian (Editor)2 ; WEYERS, Markus (Editor)3
Deutsche Forschungsgemeinschaft, Germany (Funder/Sponsor)
[1] Otto-von-Guericke-Universität, Magdeburg, Germany
[2] EMC, Poole, Dorset, United Kingdom
[3] Ferdinand-Braun-Institut, Berlin, Germany - Source
Journal of crystal growth. 2003, Vol 248, pp 119-123, 5 p ; ref : 20 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- 61.72.V A1. Carbon doping 81.15.G A3. Metalorganic vapor phase epitaxy B1. GaAs B1. Tertiary butylarsine
- Keyword (fr)
- Addition carbone Arsine organique Basse pression Caractérisation Commande processus Couche mince Croissance cristalline en phase vapeur Dopage Epitaxie phase vapeur Etude expérimentale Gallium Composé organique Gallium arséniure Homojonction Mode opératoire Méthode MOVPE Précurseur Semiconducteur III-V Arsine(t-butyl) As Ga GaAs:C Gallium(triméthyl) Composé minéral Propriété optique Propriété électrique
- Keyword (en)
- Carbon additions Organic arsine Low pressure Characterization Process control Thin films Crystal growth from vapors Doping VPE Experimental study Gallium Organic compounds Gallium arsenides Homojunctions Operating mode MOVPE method Precursor III-V semiconductors Inorganic compounds Optical properties Electrical properties
- Keyword (es)
- Arsina orgánica Caracterización Doping Método operatorio Método MOVPE
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55L Defects and impurities: doping, implantation, distribution, concentration, etc
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 14408883
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0022-0248(02)01846-8 
https://dx.doi.org/10.1016/S0022-0248(02)01846-8
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