Growth of InGaAsP/InP-laser structures monitored by using RAS techniques
- Author
- WOLFRAM, P1 ; STEIMETZ, E2 ; EBERT, W1 ; HENNINGER, B2 ; ZETTLER, J.-T2
[1] Heinrich-Hertz-Institut für Nachrichtentechnik Berlin GmbH, Einsteinufer 37, 10587 Berlin, Germany
[2] LayTec GmbH, Helmholtzstrasse 13-14, 10587 Berlin, Germany - Conference title
- ICMOVPE-XI: Proceedings of the Eleventh International Conference on Metalorganic Vapor Phase Epitaxy, Berlin, Germany, 3-7 June 2002
- Conference name
- ICMOVPE-XI International Conference on Metalorganic Vapor Phase Epitaxy (11 ; Berlin 2002-06-03)
- Author (monograph)
- KROST, Alois (Editor)1 ; MULLIN, J. Brian (Editor)2 ; WEYERS, Markus (Editor)3
Deutsche Forschungsgemeinschaft, Germany (Funder/Sponsor)
[1] Otto-von-Guericke-Universität, Magdeburg, Germany
[2] EMC, Poole, Dorset, United Kingdom
[3] Ferdinand-Braun-Institut, Berlin, Germany - Source
Journal of crystal growth. 2003, Vol 248, pp 240-243, 4 p ; ref : 7 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- 61.65.C 81.15.Kk A1. In-situ monitoring 81.40.E 81.65.C A1. Reflectance anisotropy spectroscopy A3. Metalorganic vapor phase epitaxy B1. InGaAsP
- Keyword (fr)
- Addition silicium Addition zinc Anisotropie optique Commande processus Couche mince Croissance cristalline en phase vapeur Dopage Epitaxie phase vapeur Etude expérimentale Gallium Phosphoarséniure Indium Phosphoarséniure Laser semiconducteur Mesure in situ Multicouche Méthode MOVPE Méthode contrôle Méthode optique Puits quantique Semiconducteur III-V Spectrométrie réflexion As Ga In P As Ga In In P InGaAs InGaAsP InP Arséniure Composé minéral Phosphure
- Keyword (en)
- Silicon additions Zinc additions Optical anisotropy Process control Thin films Crystal growth from vapors Doping VPE Experimental study Gallium Arsenides phosphides Indium Arsenides phosphides Semiconductor lasers Measurement in situ Multilayers MOVPE method Control method Optical method Quantum wells III-V semiconductors Reflection spectroscopy Arsenides Inorganic compounds Phosphides
- Keyword (es)
- Doping Fosfoarseniuro Fosfoarseniuro Medición en sitio Método MOVPE Método control Método óptico
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 14408905
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0022-0248(02)01858-4 
https://dx.doi.org/10.1016/S0022-0248(02)01858-4
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