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A study of synthetic sapphire by photoluminescence and X-ray diffraction

Author
KADLECIKOVA, M1 ; BREZA, J1 ; VESELY, M1 ; CERVEN, I1
[1] Department of Microelectronics, Slovak University of Technology, Ilkovičova 3, 812 19 Bratislava, Slovakia
Source

Microelectronics journal. 2003, Vol 34, Num 2, pp 95-97, 3 p ; ref : 9 ref

ISSN
0959-8324
Scientific domain
Electronics
Publisher
Elsevier Science, Oxford
Publication country
United Kingdom
Document type
Article
Language
English
Keyword (fr)
Aluminium oxyde Cryostat Diffraction RX Etude comparative Evaluation performance Forme onde Matériau synthétique Méthode mesure Nombre onde Phase alpha Phase gamma Photoluminescence Propriété matériau Résultat expérimental Saphir Spectre Raman Spectrométrie Raman Température cryogénique Al O Al2O3
Keyword (en)
Aluminium oxide Cryostat X ray diffraction Comparative study Performance evaluation Waveform Synthetic materials Measurement method Wave number Alpha phase Gamma phase Photoluminescence Properties of materials Experimental result Sapphire Raman spectrum Raman spectrometry Cryogenic temperature
Keyword (es)
Aluminio óxido Criostato Difracción RX Estudio comparativo Evaluación prestación Forma onda Método medida Número onda Fase alfa Fase gamma Fotoluminiscencia Propiedad material Resultado experimental Zafiro Espectro Raman Espectrometría Raman Temperatura criogénica
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03C Materials

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
14466828

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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