Epitaxial GaN films deposited on sapphire substrates prepared by the sol-gel method
- Author
- SARDAR, Kripasindhu1 2 ; RAJU, A. R1 ; SUBBANNA, G. N3
[1] Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore 560064, India
[2] Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore 560012, India
[3] Materials Research Centre, Indian Institute of Science, Bangalore 560012, India - Source
Solid state communications. 2003, Vol 125, Num 6, pp 355-358, 4 p ; ref : 17 ref
- CODEN
- SSCOA4
- ISSN
- 0038-1098
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Oxford
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Composé binaire Couche épitaxique Etude expérimentale Gallium nitrure Photoluminescence Procédé sol gel Semiconducteur III-V Spectre réflexion Ga N GaN Composé minéral
- Keyword (en)
- Binary compounds Epitaxial layers Experimental study Gallium nitrides Photoluminescence Sol-gel process III-V semiconductors Reflection spectrum Inorganic compounds
- Keyword (es)
- Espectro reflexión
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H40 Visible and ultraviolet spectra / 001B70H40F Semiconductors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H55 Photoluminescence / 001B70H55C Iii-v semiconductors
- Pacs
- 7840F Semiconductors
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 14467914
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0038-1098(02)00810-4 
https://dx.doi.org/10.1016/S0038-1098(02)00810-4
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