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Memory switching in In-Te glasses: results of heat-transport measurements

Author
RAJESH, R1 ; PHILIP, J1
[1] Department of Instrumentation, Cochin University of Science and Technology, Cochin 682 022, India
Source

Semiconductor science and technology. 2003, Vol 18, Num 2, pp 133-138, 6 p ; ref : 32 ref

CODEN
SSTEET
ISSN
0268-1242
Scientific domain
Electronics; Optics; Condensed state physics
Publisher
Institute of Physics, Bristol
Publication country
United Kingdom
Document type
Article
Language
English
Keyword (fr)
Chaleur massique Champ intense Commutation électrique Composé binaire Conductivité thermique Conductivité électrique Cristallisation Densité porteur charge Effet Joule Effet champ électrique Effet mémoire Etude expérimentale Indium tellurure Spectrométrie photothermique Verre chalcogénure In Te In40Te60
Keyword (en)
Specific heat High field Electrical switching Binary compounds Thermal conductivity Electrical conductivity Crystallization Carrier density Joule heating Electric field effects Memory effect Experimental study Indium tellurides Photothermal spectroscopy Chalcogenide glasses
Keyword (es)
Conmutación eléctrica Efecto memoria
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B20 Conductivity phenomena in semiconductors and insulators / 001B70B20H High-field and nonlinear effects

Pacs
7220H High-field and nonlinear effects

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
14491063

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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